2SK3004 Todos los transistores

 ..1. Size:43K  sanken-ele
 2sk3004.pdf

2SK3004 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 250 V I = 100 A, V = 0V (BR)DSS D GS V 250 V DSS I 100 nA V = 20V GSS GS V 20 V GSS I 100 A V = 250V, V = 0V DSS DS GS I 18 A D V 2.0 4.0 V V = 10V, I = 1mA TH DS D I 72 A

 ..2. Size:252K  inchange semiconductor
 2sk3004.pdf

isc N-Channel MOSFET Transistor 2SK3004 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V = 250V(Min) DSS Static Drain-Source On-Resistance R = 0.25 (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 8.1. Size:2792K  1
 2sk3009.pdf

 8.2. Size:119K  renesas
 2sk3000.pdf

2SK3000 Silicon N Channel MOS FET Low Frequency Power Switching REJ03G0379-0300Z (Previous ADE-208-585A (Z)) Rev.3.00 Jun.15.2004 Features Low on-resistance RDS(on) = 0.16 typ. (VGS = 10 V, ID = 450 mA) 4 V gate drive devices. Small package (MPAK) Expansive drain to source surge power capability Outline MPAK D 3 3 2 1. Source G 2. Gate 1 3. Drain 2

 8.3. Size:132K  renesas
 rej03g0379 2sk3000.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:33K  sanken-ele
 2sk3003.pdf

2SK3003 External dimensions 1 ...... FM20 Absolute Maximum Ratings Electrical Characteristics (Ta = 25 C) (Ta = 25 C) Ratings Symbol Ratings Unit Symbol Unit Conditions min typ max V 200 V I = 100 A, V = 0V (BR) DSS D GS V 200 V DSS I 100 nA V = 20V GSS GS V 20 V GSS I 100 A V = 200V, V = 0V DSS DS GS I 18 A D V 2.0 4.0 V V = 10V, I = 1mA TH DS D I 72

 8.5. Size:252K  inchange semiconductor
 2sk3003.pdf

isc N-Channel MOSFET Transistor 2SK3003 FEATURES Drain Current I = 18A@ T =25 D C Drain Source Voltage- V = 200V(Min) DSS Static Drain-Source On-Resistance R = 0.175 (Max) 100% avalanche tested DS(on) Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo

 8.6. Size:279K  inchange semiconductor
 2sk3009ls.pdf

isc N-Channel MOSFET Transistor 2SK3009LS FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.7. Size:357K  inchange semiconductor
 2sk3009b.pdf

isc N-Channel MOSFET Transistor 2SK3009B FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.8. Size:289K  inchange semiconductor
 2sk3009p.pdf

isc N-Channel MOSFET Transistor 2SK3009P FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid