All MOSFET. 2SK3004 Datasheet

 

2SK3004 MOSFET. Datasheet pdf. Equivalent


   Type Designator: 2SK3004
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 35 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 18 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 550 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO220F

 2SK3004 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3004 Datasheet (PDF)

 ..1. Size:43K  sanken-ele
2sk3004.pdf

2SK3004
2SK3004

2SK3004External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 250 V I = 100A, V = 0V(BR)DSS D GS V 250 VDSSI 100 nA V = 20VGSS GS V 20 VGSSI 100 A V = 250V, V = 0VDSS DS GS I 18 ADV 2.0 4.0 V V = 10V, I = 1mATH DS D I 72 A

 ..2. Size:252K  inchange semiconductor
2sk3004.pdf

2SK3004
2SK3004

isc N-Channel MOSFET Transistor 2SK3004FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V = 250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.25(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 8.1. Size:2792K  1
2sk3009.pdf

2SK3004

 8.2. Size:119K  renesas
2sk3000.pdf

2SK3004
2SK3004

2SK3000Silicon N Channel MOS FETLow Frequency Power SwitchingREJ03G0379-0300Z(Previous ADE-208-585A (Z))Rev.3.00Jun.15.2004Features Low on-resistanceRDS(on) = 0.16 typ. (VGS = 10 V, ID = 450 mA) 4 V gate drive devices. Small package (MPAK) Expansive drain to source surge power capabilityOutlineMPAKD332 1. SourceG2. Gate13. Drain2

 8.3. Size:132K  renesas
rej03g0379 2sk3000.pdf

2SK3004
2SK3004

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.4. Size:33K  sanken-ele
2sk3003.pdf

2SK3004
2SK3004

2SK3003External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 200 V I = 100A, V = 0V(BR) DSS D GS V 200 VDSSI 100 nA V = 20VGSS GS V 20 VGSSI 100 A V = 200V, V = 0VDSS DS GS I 18 ADV 2.0 4.0 V V = 10V, I = 1mATH DS D I 72

 8.5. Size:252K  inchange semiconductor
2sk3003.pdf

2SK3004
2SK3004

isc N-Channel MOSFET Transistor 2SK3003FEATURESDrain Current I = 18A@ T =25D CDrain Source Voltage-: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.175(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

 8.6. Size:279K  inchange semiconductor
2sk3009ls.pdf

2SK3004
2SK3004

isc N-Channel MOSFET Transistor 2SK3009LSFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.7. Size:357K  inchange semiconductor
2sk3009b.pdf

2SK3004
2SK3004

isc N-Channel MOSFET Transistor 2SK3009BFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

 8.8. Size:289K  inchange semiconductor
2sk3009p.pdf

2SK3004
2SK3004

isc N-Channel MOSFET Transistor 2SK3009PFEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.2(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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