FKV550N Todos los transistores

 

FKV550N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FKV550N
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 35 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 50 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 50 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
   Paquete / Cubierta: TO220F

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FKV550N Datasheet (PDF)

 ..1. Size:207K  sanken-ele
fkv550n.pdf

FKV550N FKV550N

2-2 MOS FETsSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.0 10 2502SK2701A 450 30 7 28 35 130 100 30 100 450 2.0

 ..2. Size:254K  inchange semiconductor
fkv550n.pdf

FKV550N FKV550N

isc N-Channel MOSFET Transistor FKV550NFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

 8.1. Size:21K  sanken-ele
fkv550t.pdf

FKV550N

FKV550TExternal dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 50 V I = 100A, V = 0V(BR)DSS D GS V 50 VDSSI 10 A V = 20VGSS GS V 20 VGSSI 100 A V = 50V, V = 0VDSS DS GS I 50 ADV 1.0 2.5 V V = 10V, I = 250ATH DS D I 150

 8.2. Size:251K  inchange semiconductor
fkv550t.pdf

FKV550N FKV550N

isc N-Channel MOSFET Transistor FKV550TFEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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