FKV550N Datasheet and Replacement

2-2 MOS FETsSpecifications List by Part NumberAbsolute Maximum RatingsIGSS IDSS VTHVDSS VGSS ID ID (pulse) PDPart EASConditions Conditions ConditionsNumber(nA) VGS (A) VDS (V) VDS ID(mJ)(V) (V) (A) (A) (W)max (V) min max (V) min max (V) ( A)2SK2420 60 20 30 120 40 38 100 20 100 60 2.0 4.0 10 2502SK2701A 450 30 7 28 35 130 100 30 100 450 2.0

isc N-Channel MOSFET Transistor FKV550NFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

FKV550TExternal dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 50 V I = 100A, V = 0V(BR)DSS D GS V 50 VDSSI 10 A V = 20VGSS GS V 20 VGSSI 100 A V = 50V, V = 0VDSS DS GS I 50 ADV 1.0 2.5 V V = 10V, I = 250ATH DS D I 150

isc N-Channel MOSFET Transistor FKV550TFEATURESDrain Current I = 50A@ T =25D CDrain Source Voltage-: V = 50V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose