2SK3018UB Todos los transistores

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2SK3018UB MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK3018UB

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.2 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 0.1 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 35 nS

Conductancia de drenaje-sustrato (Cd): 9 pF

Resistencia drenaje-fuente RDS(on): 5 Ohm

Empaquetado / Estuche: UMT3F

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2SK3018UB Datasheet (PDF)

1.1. 2sk3018ub.pdf Size:953K _rohm

2SK3018UB
2SK3018UB

Data Sheet 2.5V Drive Nch MOSFET 2SK3018UB ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET UMT3F 2.0 0.9 0.32 (3) ?Features 1) Low on-resistance. 2) Low voltage drive(2.5V drive). (1) (2) 0.65 0.65 0.13 1.3 Abbreviated symbol : KN ? Application Switching ? Packaging specifications ? Inner circuit (3) Package Taping Type Code TCL Basic ordering unit (pieces) 30

3.1. 2sk3018.pdf Size:79K _rohm

2SK3018UB
2SK3018UB

2SK3018 Transistor 2.5V Drive Nch MOS FET 2SK3018 External dimensions (Unit : mm) Structure Silicon N-channel UMT3 MOSFET 2.0 0.9 0.3 0.2 0.7 (3) Applications Interfacing, switching (30V, 100mA) (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Features (2) Gate Abbreviated symbol : KN 1) Low on-resistance. (3) Drain 2) Fast switching spee

3.2. 2sk3018.pdf Size:979K _htsemi

2SK3018UB
2SK3018UB

2SK3018 N-Channel Enhancement Mode MOSFET • Features • External dimensions 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this ? device ideal for portable equipment. ? ? 4) Easily designed drive circuits. 5) Easy to parallel. ? ? ? • Applications Interfacing, switching (30V, 100mA) Units:mm • Structure SOT-323 SOT-23 Silicon

3.3. 2sk3018.pdf Size:298K _gsme

2SK3018UB
2SK3018UB

? ? ? ? ? ? ? ? ? ? ? ? ? Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. 2SK3018 SOT-23 ??????(SOT-23 Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs

3.4. 2sk3018w.pdf Size:705K _wietron

2SK3018UB
2SK3018UB

2SK3018W 3 DRAIN N-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 1 GATE Description: *Gate SOT-323(SC-70) Protection Diode * Low on-resistance. 2 SOURCE * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits. * Easy to parallel. Features: * Simple Drive Requirement * Small Package Outline Maximum

3.5. 2sk3018lt1.pdf Size:475K _willas

2SK3018UB
2SK3018UB

FM120-M WILLAS THRU 2SK3018LT1 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline N-channel MOSFET Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURES le surface mounted application in o

3.6. 2sk3018wt1.pdf Size:467K _willas

2SK3018UB
2SK3018UB

FM120-M WILLAS 2SK3018WT1 THRU SOT-323 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better rMOSFET N-channel everse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application

3.7. 2sk3018s3.pdf Size:317K _cystek

2SK3018UB
2SK3018UB

Spec. No. : C800S3 Issued Date : 2010.07.19 CYStech Electronics Corp. Revised Date : 2013.12.10 Page No. : 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V 2SK3018S3 ID 100mA 8Ω RDSON(MAX) Description • Low voltage drive(2V drive) makes this device ideal for portable equipment. • High speed switching • ESD protected device • Pb-free lead pla

3.8. 2sk3018.pdf Size:799K _kexin

2SK3018UB
2SK3018UB

SMD Type MOSFET N-Channel MOSFET 2SK3018 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 30V 1 2 Drain ● ID = 0.1 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 ● RDS(ON) < 8Ω (VGS = 4V) ● RDS(ON) < 13Ω (VGS = 2.5V) Gate 1. Gate 2. Source Gate 3. Drain Protection Diode Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter

3.9. 2sk3018-3.pdf Size:1097K _kexin

2SK3018UB
2SK3018UB

SMD Type MOSFET N-Channel MOSFET 2SK3018 SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 30V Drain ● ID = 0.1 A 1 2 ● RDS(ON) < 8Ω (VGS = 4V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) < 13Ω (VGS = 2.5V) Gate 1. Gate Gate 2. Source Protection Diode 3. Drain Source ■ Absolute Maximum Ratings Ta = 25℃ Par

3.10. 2sk3018.pdf Size:1699K _shenzhen-tuofeng-semi

2SK3018UB
2SK3018UB

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2SK3018 Transistor 2.5V Drive Nch MOS FET External dimensions (Unit : mm) 2SK3018 SOT-323 2.0 0.9 0.3 0.2 0.7 Structure (3) Silicon N-channel MOSFET (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol : KN (3) Drain Interfacing, switching (30V, 100mA) SO

Otros transistores... FKV550T , FKV575 , FKV660S , FLD470 , MLD685D , SKP202 , SKP253 , 2SK3018 , IRF740 , 2SK3019 , 2SK3019EB , 2SK3541 , R4008AND , R5005CNJ , R5007ANJ , R5007ANX , R5009ANJ .

 


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