2SK3018UB - описание и поиск аналогов

Data Sheet 2.5V Drive Nch MOSFET 2SK3018UB Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3F 2.0 0.9 0.32 (3) Features 1) Low on-resistance. 2) Low voltage drive(2.5V drive). (1) (2) 0.65 0.65 0.13 1.3 Abbreviated symbol KN Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TCL Basic ordering u

2SK3018 Transistor 2.5V Drive Nch MOS FET 2SK3018 External dimensions (Unit mm) Structure Silicon N-channel UMT3 MOSFET 2.0 0.9 0.3 0.2 0.7 (3) Applications Interfacing, switching (30V, 100mA) (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Features (2) Gate Abbreviated symbol KN 1) Low on-resistance. (3) Drain 2) Fast switching s

SK3018 Features Low On-Resistiance Low Input Capaacitance Maximum Ratings

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 8 @4V 30V 100mA 13 @2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment

2SK3018 N-Channel Enhancement Mode MOSFET Features External dimensions 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel. Applications Interfacing, switching (30V, 100mA) Units mm Structure SOT-323 S

Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. 2SK3018 SOT-23 (SOT-23 Field Effect Transistors) N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FETs N-Channel Enhancement-Mode MOS FE

2SK3018W 3 DRAIN N-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 1 GATE Description *Gate SOT-323(SC-70) Protection Diode * Low on-resistance. 2 SOURCE * Fast switching speed. * Low voltage drive (2.5V) makes this device ideal for portable equipment. * Easily designed drive circuits. * Easy to parallel. Features * Simple Drive Requirement * Small Package Outline Maxi

FM120-M WILLAS THRU 2SK3018LT1 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline N-channel MOSFET Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H FEATURES le surface mounted application i

FM120-M WILLAS 2SK3018WT1 THRU SOT-323 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better rMOSFET N-channel everse leakage current and thermal resistance. SOD-123H Low profile surface mounted applicat

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 2SK3018 Transistor 2.5V Drive Nch MOS FET External dimensions (Unit mm) 2SK3018 SOT-323 2.0 0.9 0.3 0.2 0.7 Structure (3) Silicon N-channel MOSFET (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Abbreviated symbol KN (3) Drain Interfacing, switching (30V, 100mA) SO

Spec. No. C800S3 Issued Date 2010.07.19 CYStech Electronics Corp. Revised Date 2013.12.10 Page No. 1/8 ESD protected N-Channel Enhancement Mode MOSFET BVDSS 30V 2SK3018S3 ID 100mA 8 RDSON(MAX) Description Low voltage drive(2V drive) makes this device ideal for portable equipment. High speed switching ESD protected device Pb-free lead pla

2SK3018W Rev.F Jul.-2019 DATA SHEET / Descriptions SOT-323 N MOS N-Channel MOSFET in a SOT-323 Plastic Package. / Features , , , Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. Halo

2SK3018 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features , , , Low on-resistance, fast switching speed, low voltage drive, easily designed drive circuits, easy to parallel. / Applicatio

L2SK3018WT1G S-L2SK3018WT1G N-channel MOSFET 100 mA, 30 V 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 SC70(SOT-323) qualified and PPAP capable. Low on-resistance. Drain (3) Fast switching sp

LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET L2SK3018WT1G 100 mA, 30 V 3 Features 1) Low on-resistance. 1 2) Fast switching speed. 2 3) Low voltage drive (2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. SC-70 5) Easy to parallel. We declare that the material of product compliance with RoHS requirements. N - Channel MAX

SMD Type MOSFET N-Channel MOSFET 2SK3018 SOT-23-3 Unit mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V Drain ID = 0.1 A 1 2 RDS(ON) 8 (VGS = 4V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 RDS(ON) 13 (VGS = 2.5V) Gate 1. Gate Gate 2. Source Protection Diode 3. Drain Source Absolute Maximum Ratings Ta = 25 Par

SMD Type MOSFET N-Channel MOSFET 2SK3018 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V 1 2 Drain ID = 0.1 A +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 RDS(ON) 8 (VGS = 4V) RDS(ON) 13 (VGS = 2.5V) Gate 1. Gate 2. Source Gate 3. Drain Protection Diode Source Absolute Maximum Ratings Ta = 25 Parameter

2SK3018W N-Channel Enhancement Mode Field Effect Transistor Product Summary V 30V DS I 300mA D R ( at V =10V) 8.0ohm DS(ON) GS R ( at V =4.5V) 13.0ohm DS(ON) GS ESD Protected Up to 2.5KV (HBM) General Description Trench Power MV MOSFET technology Voltage controlled small signal switch Low input Capacitance Fast Switching Speed Low

2SK3018 N-Channel Power MOSFET MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Max Unit Drain-Source Voltage BVDSS 30 V Gate- Source Voltage VGS +20 V Drain Current (continuous) IDR 100 mA Drain Current (pulsed) IDRM 400 mA THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS THERMAL CHARACTERISTICS Characteristi

Plastic-Encapsulate Mosfets 2SK3018 FEATURES N-Channel MOSFET Fast switching speed and low on-resistance. Easily designed drived circuits. Absolute Maximum Ratings (TA=25oC, unless otherwise noted) 1.Gate 2.Source SOT-23 Parameter Symbol Ratings Unit 3.Drain VDS 30 Drain-Source Voltage V VGS Gate-source Voltage V 20 Drain ID Drain Current (Continuous) 100 mA IDM Dra

2SK3018W N-channel MOSFET FEATURES Low on-resistance Fast switching speed Low voltage drive makes this device ideal for portable equipment Low voltage drive makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted) = 25 C unless otherwise noted) MOSFET ELECTRICAL CHARACT

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-Channel 30-V(D-S) MOSFET 2SK3018 V(BR)DSS RDS(on)MAX ID SOT-23 SOT-323 2.5 @ 4.5V 3 30V 0.1A 1.GATE 3.0 @ 2.5V 2.SOURCE 3.DRAIN 1 2 Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (2.5V) makes this device ideal for MARKING Equivalent Circuit por

MMBT5551 2SK3018 AO3400 SI2305 SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES Low on-resistance Fast switching speed 1. GATE 2. SOURCE Low voltage drive makes this device ideal for portable equipment 3. DRAIN Easily designed drive circuits Easy to parallel Marking KN MOSFET MAXIMUM RATINGS (Ta = 25 C unless otherwise noted)