RCX080N20 Todos los transistores

 ..1. Size:1119K  rohm
 rcx080n20.pdf

Data Sheet 10V Drive Nch MOSFET RCX080N20 Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. 2.54 2.54 0.75 2.6 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering un

 6.1. Size:1211K  rohm
 rcx080n25.pdf

Data Sheet 10V Drive Nch MOSFET RCX080N25 Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 1.3 2) Low input capacitance. 3) High ESD. 0.8 2.54 2.54 0.75 2.6 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering uni

 6.2. Size:252K  inchange semiconductor
 rcx080n25.pdf

isc N-Channel MOSFET Transistor RCX080N25 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos

 9.1. Size:408K  rohm
 rcx081n20.pdf

RCX081N20 Nch 200V 8.0A Power MOSFET Datasheet lOutline VDSS 200V TO-220FM RDS(on) (Max.) 770mW ID 8.0A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lP

 9.2. Size:251K  inchange semiconductor
 rcx081n20.pdf

isc N-Channel MOSFET Transistor RCX081N20 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R = 0.77 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo