RCX080N20 Specs and Replacement

Type Designator: RCX080N20

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 33 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm

Package: TO220FM

RCX080N20 substitution

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RCX080N20 datasheet

 ..1. Size:1119K  rohm
 rcx080n20.pdf pdf_icon

RCX080N20

Data Sheet 10V Drive Nch MOSFET RCX080N20 Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1.2 1) Low on-resistance. 1.3 2) Low input capacitance. 0.8 3) High ESD. 2.54 2.54 0.75 2.6 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering un... See More ⇒

 6.1. Size:1211K  rohm
 rcx080n25.pdf pdf_icon

RCX080N20

Data Sheet 10V Drive Nch MOSFET RCX080N25 Structure Dimensions (Unit mm) TO-220FM Silicon N-channel MOSFET 10.0 3.2 4.5 2.8 Features 1) Low on-resistance. 1.2 1.3 2) Low input capacitance. 3) High ESD. 0.8 2.54 2.54 0.75 2.6 (1) (2) (3) Application Switching Packaging specifications Inner circuit Package Bulk Type Code - 1 Basic ordering uni... See More ⇒

 6.2. Size:252K  inchange semiconductor
 rcx080n25.pdf pdf_icon

RCX080N20

isc N-Channel MOSFET Transistor RCX080N25 FEATURES Drain Current I = 8A@ T =25 D C Drain Source Voltage- V =250V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos... See More ⇒

 9.1. Size:408K  rohm
 rcx081n20.pdf pdf_icon

RCX080N20

RCX081N20 Nch 200V 8.0A Power MOSFET Datasheet lOutline VDSS 200V TO-220FM RDS(on) (Max.) 770mW ID 8.0A (3) PD 40W (1) (2) lFeatures lInner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant 6) 100% Avalanche tested lP... See More ⇒

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Detailed specifications: RCD050N20, RCD060N25, RCD075N20, RCD080N25, RCD100N20, RCJ330N25, RCJ450N20, RCX050N25, RFP50N06, RCX080N25, RCX120N20, RCX120N25, RCX160N20, RCX330N25, RCX450N20, RHK005N03, RHP020N06

Keywords - RCX080N20 MOSFET specs

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