All MOSFET. RCX080N20 Datasheet

 

RCX080N20 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RCX080N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.25 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 33 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.47 Ohm
   Package: TO220FM

 RCX080N20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RCX080N20 Datasheet (PDF)

 ..1. Size:1119K  rohm
 rcx080n20.pdf

RCX080N20 RCX080N20

Data Sheet10V Drive Nch MOSFET RCX080N20 Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1.21) Low on-resistance.1.32) Low input capacitance.0.83) High ESD.2.54 2.54 0.75 2.6(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage BulkTypeCode -1Basic ordering un

 6.1. Size:1211K  rohm
 rcx080n25.pdf

RCX080N20 RCX080N20

Data Sheet10V Drive Nch MOSFETRCX080N25 Structure Dimensions (Unit : mm)TO-220FMSilicon N-channel MOSFET10.0 3.2 4.52.8Features1) Low on-resistance.1.21.32) Low input capacitance.3) High ESD.0.82.54 2.54 0.75 2.6(1) (2) (3) ApplicationSwitching Packaging specifications Inner circuitPackage BulkTypeCode -1Basic ordering uni

 6.2. Size:252K  inchange semiconductor
 rcx080n25.pdf

RCX080N20 RCX080N20

isc N-Channel MOSFET Transistor RCX080N25FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V =250V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

 9.1. Size:408K  rohm
 rcx081n20.pdf

RCX080N20 RCX080N20

RCX081N20 Nch 200V 8.0A Power MOSFET DatasheetlOutlineVDSS200VTO-220FMRDS(on) (Max.)770mWID8.0A(3) PD40W(1) (2) lFeatures lInner circuit1) Low on-resistance.(1) Gate 2) Fast switching speed.(2) Drain (3) Source 3) Drive circuits can be simple.4) Parallel use is easy.*1 BODY DIODE 5) Pb-free lead plating ; RoHS compliant6) 100% Avalanche testedlP

 9.2. Size:251K  inchange semiconductor
 rcx081n20.pdf

RCX080N20 RCX080N20

isc N-Channel MOSFET Transistor RCX081N20FEATURESDrain Current I = 8A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.77(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: CHM2342GP | FDP060AN08A0

 

 
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