RSD050N06 Todos los transistores

 

RSD050N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RSD050N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 8 nC
   trⓘ - Tiempo de subida: 17 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.078 Ohm
   Paquete / Cubierta: CPT3 SC63 SOT428

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RSD050N06 Datasheet (PDF)

 ..1. Size:1224K  rohm
rsd050n06.pdf

RSD050N06
RSD050N06

Data Sheet4V Drive Nch MOSFET RSD050N06Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specifications Inner circ

 0.1. Size:1067K  rohm
rsd050n06fra.pdf

RSD050N06
RSD050N06

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD050N06FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specif

 0.2. Size:1225K  rohm
rsd050n06tl.pdf

RSD050N06
RSD050N06

Data Sheet4V Drive Nch MOSFET RSD050N06Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ApplicationsSwitchingPackaging specifications Inner circ

 7.1. Size:505K  rohm
rsd050n10.pdf

RSD050N06
RSD050N06

4V Drive Nch MOSFET RSD050N10Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed.3) Drive circuits can be simple. 3) Parallel use is easy. 9 ApplicationsSwitchingPackaging specifications Inner circuitPackage

 7.2. Size:830K  rohm
rsd050n10fra.pdf

RSD050N06
RSD050N06

AEC-Q101 Qualified4V Drive Nch MOSFET RSD050N10FRAStructure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed.3) Drive circuits can be simple. 3) Parallel use is easy. 9 ApplicationsSwitchingPackaging specifications

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: TK13A25D | TF2323

 

 
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History: TK13A25D | TF2323

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