All MOSFET. RSD050N06 Datasheet

 

RSD050N06 MOSFET. Datasheet pdf. Equivalent

Type Designator: RSD050N06

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 15 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 0.078 Ohm

Package: CPT3_SC63_SOT428

RSD050N06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RSD050N06 Datasheet (PDF)

1.1. rsd050n06.pdf Size:1224K _rohm

RSD050N06
RSD050N06

Data Sheet 4V Drive Nch MOSFET RSD050N06 ?Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) ?Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 3) Parallel use is easy. ?Applications Switching ?Packaging specifications ? Inner circuit Package CP

3.1. rsd050n10.pdf Size:505K _rohm

RSD050N06
RSD050N06

4V Drive Nch MOSFET RSD050N10 ?Structure ?Dimensions (Unit : mm) Silicon N-channel MOSFET CPT3 (SC-63) ?Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 3) Parallel use is easy. 9 ?Applications Switching ?Packaging specifications ?Inner circuit Package CPT3 ?1 Type

Datasheet: RRL025P03 , RRL035P03 , RRQ030P03 , RRQ045P03 , RRR015P03 , RRR030P03 , RRR040P03 , RSC002P03 , BUZ11 , RSD050N10 , RSD080N06 , RSD080P05 , RSD100N10 , RSD140P06 , RSD150N06 , RSD160P05 , RSD175N10 .

 


RSD050N06
  RSD050N06
  RSD050N06
 

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