RSD080P05 Todos los transistores

 

RSD080P05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RSD080P05
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 15 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 160 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.065 Ohm
   Paquete / Cubierta: CPT3 SC63 SOT428
     - Selección de transistores por parámetros

 

RSD080P05 Datasheet (PDF)

 ..1. Size:1210K  rohm
 rsd080p05.pdf pdf_icon

RSD080P05

Data Sheet4V Drive Pch MOSFET RSD080P05Structure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Packaging specifications Inner cir

 0.1. Size:1413K  rohm
 rsd080p05fra.pdf pdf_icon

RSD080P05

Data SheetAEC-Q101 Qualified4V Drive Pch MOSFET RSD080P05RSD080P05FRAStructure Dimensions (Unit : mm)Silicon P-channel MOSFETCPT3 (SC-63) Features1) Low on-resistance.2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. ApplicationSwitching Pack

 8.1. Size:1158K  rohm
 rsd080n06.pdf pdf_icon

RSD080P05

Data Sheet4V Drive Nch MOSFET RSD080N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) 4V drive.0.753) High power package(CPT3).0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuit1Package TapingTypeCode T

 8.2. Size:1367K  rohm
 rsd080n06fra.pdf pdf_icon

RSD080P05

Data SheetAEC-Q101 Qualified4V Drive Nch MOSFET RSD080N06RSD080N06FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETCPT36.5(SC-63)5.12.30.5Features1) Low on-resistance.2) 4V drive.0.753) High power package(CPT3).0.650.9 2.3(1) (2) (3)2.3 0.51.0 ApplicationSwitching Packaging specifications Inner circuit

MOSTRAR MÁS

Otros transistores... RRQ045P03 , RRR015P03 , RRR030P03 , RRR040P03 , RSC002P03 , RSD050N06 , RSD050N10 , RSD080N06 , IRF9540 , RSD100N10 , RSD140P06 , RSD150N06 , RSD160P05 , RSD175N10 , RSD200N05 , RSD200N10 , RSE002N06 .

History: IRF3704ZPBF | WFY3N02 | APT904R2AN | 2SJ360 | SVF7N60CF | IRF7309IPBF | EFC4627R

 

 
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