RSD200N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSD200N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 20 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 61 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.041 Ohm

Encapsulados: CPT3 SC63 SOT428

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RSD200N10 datasheet

 ..1. Size:241K  rohm
 rsd200n10.pdf pdf_icon

RSD200N10

4V Drive Nch MOSFET RSD200N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 20V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate) Applications (2)Collector(Drain) Switching (

 0.1. Size:239K  rohm
 rsd200n10tl.pdf pdf_icon

RSD200N10

4V Drive Nch MOSFET RSD200N10 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 Features 1) Low on-resistance. 2) Fast switching speed. 3) Wide SOA (safe operating area). 4) Gate-source voltage (VGSS) guaranteed to be 20V. 5) Drive circuits can be simple. 6) Parallel use is easy. (1)Base(Gate) Applications (2)Collector(Drain) Switching (

 7.1. Size:1197K  rohm
 rsd200n05.pdf pdf_icon

RSD200N10

Data Sheet 4V Drive Nch MOSFET RSD200N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET CPT3 (SC-63) Features 1) Low on-resistance. 2) Fast switching speed. 3) Drive circuits can be simple. 9 4) Parallel use is easy. Application Switching Packaging specifications Inner circu

 9.1. Size:366K  rohm
 rsd201n10.pdf pdf_icon

RSD200N10

RSD201N10 Nch 100V 20A Power MOSFET Datasheet lOutline VDSS 100V CPT3 (SC-63) RDS(on) (Max.) 46mW (3) ID 20A (2) (1) PD 20W lFeatures lInner circuit (3) 1) Low on-resistance. *1 (1) Gate 2) Fast switching speed. (2) Drain (1) (3) Source 3) Drive circuits can be simple. *2 *1 ESD PROTECTION DIODE 4) Parallel use is easy. *2 BODY DIODE 5) Pb-f

MOSTRAR MÁS

Otros transistores... RSD080N06, RSD080P05, RSD100N10, RSD140P06, RSD150N06, RSD160P05, RSD175N10, RSD200N05, IRF9540, RSE002N06, RSE002P03, RSF010P05, RSF014N03, RSF015N06, RSH065N06, RSH070N05, RSH070P05