RSE002N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RSE002N06
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 4.5 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm
Paquete / Cubierta: EMT3
Búsqueda de reemplazo de RSE002N06 MOSFET
RSE002N06 Datasheet (PDF)
rse002n06.pdf
2.5V Drive Nch MOSFET RSE002N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET EMT31.6 0.70.3 0.55( )3Features( ) ( )2 11) High speed switing.0.2 0.20.152) Small package(EMT3). 0.5 0.51.03) Low voltage drive(2.5V drive).(1)Source(2)GateAbbreviated symbol : RK(3)Drain ApplicationSwitching Packaging specifications Inner
rse002p03.pdf
RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET EMT31.6 0.70.550.3 Features ( )31) Low On-resistance. ( ) ( )2 12) Small package (EMT3). 0.2 0.20.150.5 0.53) 4V drive. 1.0(1)Source(2)Gate Applications(3)Drain Abbreviated symbol : WPSwitching Package specifications Inner circui
rse002p03tl.pdf
RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET EMT31.6 0.70.550.3 Features ( )31) Low On-resistance. ( ) ( )2 12) Small package (EMT3). 0.2 0.20.150.5 0.53) 4V drive. 1.0(1)Source(2)Gate Applications(3)Drain Abbreviated symbol : WPSwitching Package specifications Inner circui
Otros transistores... RSD080P05 , RSD100N10 , RSD140P06 , RSD150N06 , RSD160P05 , RSD175N10 , RSD200N05 , RSD200N10 , AON7408 , RSE002P03 , RSF010P05 , RSF014N03 , RSF015N06 , RSH065N06 , RSH070N05 , RSH070P05 , RSJ10HN06 .
History: RTR025N05
History: RTR025N05
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