RSE002N06
MOSFET. Datasheet pdf. Equivalent
Type Designator: RSE002N06
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.15
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 0.25
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 5
nS
Cossⓘ -
Output Capacitance: 4.5
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.7
Ohm
Package:
EMT3
RSE002N06
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
RSE002N06
Datasheet (PDF)
..1. Size:182K rohm
rse002n06.pdf 
2.5V Drive Nch MOSFET RSE002N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET EMT31.6 0.70.3 0.55( )3Features( ) ( )2 11) High speed switing.0.2 0.20.152) Small package(EMT3). 0.5 0.51.03) Low voltage drive(2.5V drive).(1)Source(2)GateAbbreviated symbol : RK(3)Drain ApplicationSwitching Packaging specifications Inner
8.1. Size:62K rohm
rse002p03.pdf
RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET EMT31.6 0.70.550.3 Features ( )31) Low On-resistance. ( ) ( )2 12) Small package (EMT3). 0.2 0.20.150.5 0.53) 4V drive. 1.0(1)Source(2)Gate Applications(3)Drain Abbreviated symbol : WPSwitching Package specifications Inner circui
8.2. Size:61K rohm
rse002p03tl.pdf
RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET EMT31.6 0.70.550.3 Features ( )31) Low On-resistance. ( ) ( )2 12) Small package (EMT3). 0.2 0.20.150.5 0.53) 4V drive. 1.0(1)Source(2)Gate Applications(3)Drain Abbreviated symbol : WPSwitching Package specifications Inner circui
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