RSE002N06 Specs and Replacement
Type Designator: RSE002N06
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.15 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 4.5 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
Package: EMT3
RSE002N06 substitution
- MOSFET ⓘ Cross-Reference Search
RSE002N06 datasheet
rse002n06.pdf
2.5V Drive Nch MOSFET RSE002N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET EMT3 1.6 0.7 0.3 0.55 ( ) 3 Features ( ) ( ) 2 1 1) High speed switing. 0.2 0.2 0.15 2) Small package(EMT3). 0.5 0.5 1.0 3) Low voltage drive(2.5V drive). (1)Source (2)Gate Abbreviated symbol RK (3)Drain Application Switching Packaging specifications Inner ... See More ⇒
rse002p03.pdf
RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET EMT3 1.6 0.7 0.55 0.3 Features ( ) 3 1) Low On-resistance. ( ) ( ) 2 1 2) Small package (EMT3). 0.2 0.2 0.15 0.5 0.5 3) 4V drive. 1.0 (1)Source (2)Gate Applications (3)Drain Abbreviated symbol WP Switching Package specifications Inner circui... See More ⇒
rse002p03tl.pdf
RSE002P03 Transistors 4V Drive Pch MOSFET RSE002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET EMT3 1.6 0.7 0.55 0.3 Features ( ) 3 1) Low On-resistance. ( ) ( ) 2 1 2) Small package (EMT3). 0.2 0.2 0.15 0.5 0.5 3) 4V drive. 1.0 (1)Source (2)Gate Applications (3)Drain Abbreviated symbol WP Switching Package specifications Inner circui... See More ⇒
Detailed specifications: RSD080P05, RSD100N10, RSD140P06, RSD150N06, RSD160P05, RSD175N10, RSD200N05, RSD200N10, AON7408, RSE002P03, RSF010P05, RSF014N03, RSF015N06, RSH065N06, RSH070N05, RSH070P05, RSJ10HN06
Keywords - RSE002N06 MOSFET specs
RSE002N06 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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