RSF010P05 Todos los transistores

 

RSF010P05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RSF010P05
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4 nS
   Cossⓘ - Capacitancia de salida: 40 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.33 Ohm
   Paquete / Cubierta: TUMT3
 

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RSF010P05 datasheet

 ..1. Size:1229K  rohm
rsf010p05.pdf pdf_icon

RSF010P05

Data Sheet 4V Drive Pch MOSFET RSF010P05 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(4V) Abbreviated symbol SU Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 1 RSF010P

 6.1. Size:49K  rohm
rsf010p03tl.pdf pdf_icon

RSF010P05

RSF010P03 Transistors 4V Drive Pch MOS FET RSF010P03 Structure External dimensions (Unit mm) Silicon P-channel MOS FET TUMT3 0.85Max. 2.0 0.3 Features 0.77 (3) 1) Low on-resistance. 0 0.1 2) High speed switching. (1) (2) 0.17 0.65 0.65 1.3 (1) Gate Applications (2) Source Abbreviated symbol WX Switching (3) Drain Packaging specifications Inner circui

 9.1. Size:77K  rohm
rsf014n03.pdf pdf_icon

RSF010P05

RSF014N03 Transistors 4V Drive Nch MOSFET RSF014N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) 4V drive. (1) Gate (2) Source Abbreviated symbol PN Applications (3) Drain Switching Packaging specifications Inner circuit (3) Package Taping Type Code

 9.2. Size:75K  rohm
rsf014n03tl.pdf pdf_icon

RSF010P05

RSF014N03 Transistors 4V Drive Nch MOSFET RSF014N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) 4V drive. (1) Gate (2) Source Abbreviated symbol PN Applications (3) Drain Switching Packaging specifications Inner circuit (3) Package Taping Type Code

Otros transistores... RSD140P06 , RSD150N06 , RSD160P05 , RSD175N10 , RSD200N05 , RSD200N10 , RSE002N06 , RSE002P03 , STP75NF75 , RSF014N03 , RSF015N06 , RSH065N06 , RSH070N05 , RSH070P05 , RSJ10HN06 , RSJ250P10 , RSJ300N10 .

 

 

 


 
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