All MOSFET. RSF010P05 Datasheet

 

RSF010P05 MOSFET. Datasheet pdf. Equivalent


   Type Designator: RSF010P05
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 2.3 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.33 Ohm
   Package: TUMT3

 RSF010P05 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RSF010P05 Datasheet (PDF)

 ..1. Size:1229K  rohm
 rsf010p05.pdf

RSF010P05 RSF010P05

Data Sheet4V Drive Pch MOSFET RSF010P05 Structure Dimensions (Unit : mm)Silicon P-channel MOSFETTUMT3Features1) Low On-resistance.2) Small high power package.3) Low voltage drive.(4V)Abbreviated symbol : SU ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingType Code TLBasic ordering unit (pieces) 30001RSF010P

 6.1. Size:49K  rohm
 rsf010p03tl.pdf

RSF010P05 RSF010P05

RSF010P03 Transistors 4V Drive Pch MOS FET RSF010P03 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TUMT3 0.85Max.2.00.3 Features 0.77(3)1) Low on-resistance. 0~0.12) High speed switching. (1) (2)0.170.65 0.651.3(1) Gate Applications(2) SourceAbbreviated symbol : WXSwitching (3) Drain Packaging specifications Inner circui

 9.1. Size:77K  rohm
 rsf014n03.pdf

RSF010P05 RSF010P05

RSF014N03 Transistors 4V Drive Nch MOSFET RSF014N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) 4V drive. (1) Gate(2) SourceAbbreviated symbol : PN Applications(3) DrainSwitching Packaging specifications Inner circuit (3)Package TapingType Code

 9.2. Size:75K  rohm
 rsf014n03tl.pdf

RSF010P05 RSF010P05

RSF014N03 Transistors 4V Drive Nch MOSFET RSF014N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) 4V drive. (1) Gate(2) SourceAbbreviated symbol : PN Applications(3) DrainSwitching Packaging specifications Inner circuit (3)Package TapingType Code

 9.3. Size:1193K  rohm
 rsf015n06.pdf

RSF010P05 RSF010P05

Data Sheet4V Drive Nch MOSFET RSF015N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTUMT3Features1) Built-in G-S Protection Diode.2) Small Surface Mount Package (TUMT3).3) Low voltage drive. (4V) Abbreviated symbol : PX ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TLBasic ordering unit (p

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: RSD201N10 | SSM6680GM

 

 
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