RSF015N06 Todos los transistores

 

RSF015N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RSF015N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 28 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
   Paquete / Cubierta: TUMT3
 

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RSF015N06 Datasheet (PDF)

 ..1. Size:1193K  rohm
rsf015n06.pdf pdf_icon

RSF015N06

Data Sheet4V Drive Nch MOSFET RSF015N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTUMT3Features1) Built-in G-S Protection Diode.2) Small Surface Mount Package (TUMT3).3) Low voltage drive. (4V) Abbreviated symbol : PX ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TLBasic ordering unit (p

 9.1. Size:49K  rohm
rsf010p03tl.pdf pdf_icon

RSF015N06

RSF010P03 Transistors 4V Drive Pch MOS FET RSF010P03 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TUMT3 0.85Max.2.00.3 Features 0.77(3)1) Low on-resistance. 0~0.12) High speed switching. (1) (2)0.170.65 0.651.3(1) Gate Applications(2) SourceAbbreviated symbol : WXSwitching (3) Drain Packaging specifications Inner circui

 9.2. Size:77K  rohm
rsf014n03.pdf pdf_icon

RSF015N06

RSF014N03 Transistors 4V Drive Nch MOSFET RSF014N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) 4V drive. (1) Gate(2) SourceAbbreviated symbol : PN Applications(3) DrainSwitching Packaging specifications Inner circuit (3)Package TapingType Code

 9.3. Size:75K  rohm
rsf014n03tl.pdf pdf_icon

RSF015N06

RSF014N03 Transistors 4V Drive Nch MOSFET RSF014N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) 4V drive. (1) Gate(2) SourceAbbreviated symbol : PN Applications(3) DrainSwitching Packaging specifications Inner circuit (3)Package TapingType Code

Otros transistores... RSD160P05 , RSD175N10 , RSD200N05 , RSD200N10 , RSE002N06 , RSE002P03 , RSF010P05 , RSF014N03 , K4145 , RSH065N06 , RSH070N05 , RSH070P05 , RSJ10HN06 , RSJ250P10 , RSJ300N10 , RSJ400N06 , RSJ450N04 .

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