RSF015N06 Todos los transistores

 

RSF015N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSF015N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.8 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 1.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 9 nS

Conductancia de drenaje-sustrato (Cd): 28 pF

Resistencia drenaje-fuente RDS(on): 0.21 Ohm

Empaquetado / Estuche: TUMT3

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RSF015N06 Datasheet (PDF)

1.1. rsf015n06.pdf Size:1193K _rohm

RSF015N06
RSF015N06

Data Sheet 4V Drive Nch MOSFET RSF015N06 ? Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 ?Features 1) Built-in G-S Protection Diode. 2) Small Surface Mount Package (TUMT3). 3) Low voltage drive. (4V) Abbreviated symbol : PX ? Application Switching ? Packaging specifications ? Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 ?1

5.1. rsf014n03tl.pdf Size:75K _update_mosfet

RSF015N06
RSF015N06

RSF014N03 Transistors 4V Drive Nch MOSFET RSF014N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) 4V drive. (1) Gate (2) Source Abbreviated symbol : PN Applications (3) Drain Switching Packaging specifications Inner circuit (3) Package Taping Type Code

5.2. rsf010p03tl.pdf Size:49K _update_mosfet

RSF015N06
RSF015N06

RSF010P03 Transistors 4V Drive Pch MOS FET RSF010P03 Structure External dimensions (Unit : mm) Silicon P-channel MOS FET TUMT3 0.85Max. 2.0 0.3 Features 0.77 (3) 1) Low on-resistance. 0~0.1 2) High speed switching. (1) (2) 0.17 0.65 0.65 1.3 (1) Gate Applications (2) Source Abbreviated symbol : WX Switching (3) Drain Packaging specifications Inner circui

 5.3. rsf010p05.pdf Size:1229K _rohm

RSF015N06
RSF015N06

Data Sheet 4V Drive Pch MOSFET RSF010P05 ? Structure ? Dimensions (Unit : mm) Silicon P-channel MOSFET TUMT3 ?Features 1) Low On-resistance. 2) Small high power package. 3) Low voltage drive.(4V) Abbreviated symbol : SU ? Application Switching ? Packaging specifications ? Inner circuit (3) Package Taping Type Code TL Basic ordering unit (pieces) 3000 ?1 RSF010P05 ? ?2 ? Absol

5.4. rsf014n03.pdf Size:77K _rohm

RSF015N06
RSF015N06

RSF014N03 Transistors 4V Drive Nch MOSFET RSF014N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT3). 3) 4V drive. (1) Gate (2) Source Abbreviated symbol : PN Applications (3) Drain Switching Packaging specifications Inner circuit (3) Package Taping Type Code TL

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