RSR020N06 Todos los transistores

 

RSR020N06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSR020N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 60 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 10 nS

Conductancia de drenaje-sustrato (Cd): 50 pF

Resistencia drenaje-fuente RDS(on): 0.12 Ohm

Empaquetado / Estuche: TSMT3

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RSR020N06 Datasheet (PDF)

1.1. rsr020n06tl.pdf Size:592K _update_mosfet

RSR020N06
RSR020N06

RSR020N06 Nch 60V 2A Power MOSFET Datasheet lOutline VDSS TSMT3 60V (3) RDS(on) (Max.) 170mW (1) ID 2A (2) PD 1.0W lFeatures lInner circuit 1) Low on - resistance. (1) Gate 2) Built-in G-S Protection Diode. (2) Source (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging speci

1.2. rsr020n06.pdf Size:193K _rohm

RSR020N06
RSR020N06

4V Drive Nch MOS FET RSR020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. (1) (2) 2) Built-in G-S Protection Diode. 0.95 0.95 0.16 3) Small Surface Mount Package (TSMT3) . 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : PZ (3) Drain Application Switching I

 4.1. rsr020p05fra.pdf Size:1038K _update_mosfet

RSR020N06
RSR020N06

RSR020P05FRA Pch -45V -2.0A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS -45V TSMT3 (3) RDS(on) (Max.) 190mW (1) ID -2.0A PD 1.0W (2) lFeatures lInner circuit 1) Low on - resistance. 2) Built-in G-S Protection Diode. (1) Gate (2) Source 3) Small Surface Mount Package (TSMT3). (3) Drain 4) Pb-free lead plating ; RoHS compliant *1 BODY DIODE *2 ESD PROTE

4.2. rsr020p03 rsr020p03tl.pdf Size:68K _update_mosfet

RSR020N06
RSR020N06

RSR020P03 Transistors 4V Drive Pch MOSFET RSR020P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 3 Features ( ) 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( ) 1 2 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : WZ Applications (3) D

 4.3. rsr020p05.pdf Size:563K _update_mosfet

RSR020N06
RSR020N06

RSR020P05 Pch -45V -2.0A Power MOSFET Datasheet lOutline VDSS -45V TSMT3 (3) RDS(on) (Max.) 190mW (1) ID -2.0A PD 1.0W (2) lFeatures lInner circuit 1) Low on - resistance. 2) Built-in G-S Protection Diode. (1) Gate (2) Source 3) Small Surface Mount Package (TSMT3). (3) Drain 4) Pb-free lead plating ; RoHS compliant *1 BODY DIODE *2 ESD PROTECTION DIODE lPackagin

Otros transistores... RSJ650N10 , RSM002N06 , RSM002P03 , RSQ015N06 , RSQ015P10 , RSQ020N03 , RSQ045N03 , RSR010N10 , IRF5305 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , RT1A045AP , RT1A050ZP , RT1A060AP .

 
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