RSR020N06 Todos los transistores

 

RSR020N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RSR020N06
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: TSMT3
 

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RSR020N06 datasheet

 ..1. Size:193K  rohm
 rsr020n06.pdf pdf_icon

RSR020N06

4V Drive Nch MOS FET RSR020N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. (1) (2) 2) Built-in G-S Protection Diode. 0.95 0.95 0.16 3) Small Surface Mount Package (TSMT3) . 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol PZ (3) Drain Application Switching

 0.1. Size:592K  rohm
 rsr020n06tl.pdf pdf_icon

RSR020N06

RSR020N06 Nch 60V 2A Power MOSFET Datasheet lOutline VDSS TSMT3 60V (3) RDS(on) (Max.) 170mW (1) ID 2A (2) PD 1.0W lFeatures lInner circuit 1) Low on - resistance. (1) Gate 2) Built-in G-S Protection Diode. (2) Source (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant *1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging speci

 0.2. Size:1735K  cn vbsemi
 rsr020n06tl.pdf pdf_icon

RSR020N06

RSR020N06TL www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Available TrenchFET Power MOSFET 0.085 at VGS = 10 V 4.0 60 2.1 nC 100 % Rg Tested 0.096 at VGS = 4.5 V 3.8 100 % UIS Tested APPLICATIONS Battery Switch DC/DC Converter D TO-236 (SOT23)

 8.1. Size:68K  rohm
 rsr020p03 rsr020p03tl.pdf pdf_icon

RSR020N06

RSR020P03 Transistors 4V Drive Pch MOSFET RSR020P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 3 Features ( ) 1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( ) 1 2 0.95 0.95 3) 4V drive 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol WZ Applications (3) D

MOSTRAR MÁS

Otros transistores... RSJ650N10 , RSM002N06 , RSM002P03 , RSQ015N06 , RSQ015P10 , RSQ020N03 , RSQ045N03 , RSR010N10 , CS150N03A8 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , RT1A045AP , RT1A050ZP , RT1A060AP .

 

 

 


 
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