RSR020N06 - параметры транзистора MOSFET, его аналоги, datasheet

RSR020N06 Datasheet (PDF)

..1. Size:193K rohm
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4V Drive Nch MOS FET RSR020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.90.850.4 0.7(3) Features 1) Low on-resistance. (1) (2)2) Built-in G-S Protection Diode. 0.95 0.950.163) Small Surface Mount Package (TSMT3) . 1.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : PZ(3) Drain Application Switching

0.1. Size:592K rohm
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RSR020N06 Nch 60V 2A Power MOSFET DatasheetlOutlineVDSS TSMT3 60V(3) RDS(on) (Max.)170mW(1) ID2A(2) PD1.0WlFeatures lInner circuit1) Low on - resistance.(1) Gate 2) Built-in G-S Protection Diode.(2) Source (3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 ESD PROTECTION DIODE *2 BODY DIODE lPackaging speci

0.2. Size:1735K cn vbsemi
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RSR020N06TLwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)

8.1. Size:68K rohm
rsr020p03 rsr020p03tl.pdf pdf_icon

RSR020P03 Transistors 4V Drive Pch MOSFET RSR020P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET TSMT31.0MAX2.90.850.4 0.73 Features ( )1) Low On-resistance 2) Space saving-small surface mount package (TSMT3) ( ) ( )1 20.95 0.953) 4V drive 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : WZ Applications(3) D