RSR025N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RSR025N03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 1 W
Tensión drenaje-fuente (Vds): 30 V
Tensión compuerta-fuente (Vgs): 20 V
Corriente continua de drenaje (Id): 2.5 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de elevación (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 55 pF
Resistencia drenaje-fuente RDS(on): 0.05 Ohm
Empaquetado / Estuche: TSMT3
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RSR025N03 Datasheet (PDF)
1.1. rsr025n03.pdf Size:65K _rohm
RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. ( ) ( ) 1 2 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : Q
2.1. rsr025n05.pdf Size:1170K _rohm
Data Sheet 4V Drive Nch MOSFET RSR025N05 ?Structure ? Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 ?Features (3) 1) Low on-resistance. 2) Fast switching speed. (1) (2) 3) Drive circuits can be simple. 4) Parallel use is easy. ?Application Switching ?Packaging specifications ? Inner circuit Package Taping (3) Type Code TL Basic ordering unit (pieces) 3000 ?1 RSR025N0
5.1. rsr020n06.pdf Size:193K _rohm
4V Drive Nch MOS FET RSR020N06 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. (1) (2) 2) Built-in G-S Protection Diode. 0.95 0.95 0.16 3) Small Surface Mount Package (TSMT3) . 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol : PZ (3) Drain Application Switching I
Otros transistores... RSM002N06 , RSM002P03 , RSQ015N06 , RSQ015P10 , RSQ020N03 , RSQ045N03 , RSR010N10 , RSR020N06 , IRF250 , RSR025N05 , RSR030N06 , RSU002N06 , RSU002P03 , RT1A045AP , RT1A050ZP , RT1A060AP , RT1C060UN .