RSR025N03 Todos los transistores

 

RSR025N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RSR025N03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 10 nS
   Cossⓘ - Capacitancia de salida: 55 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm
   Paquete / Cubierta: TSMT3

 Búsqueda de reemplazo de MOSFET RSR025N03

 

RSR025N03 Datasheet (PDF)

 ..1. Size:65K  rohm
rsr025n03.pdf

RSR025N03
RSR025N03

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol

 0.1. Size:63K  rohm
rsr025n03tl.pdf

RSR025N03
RSR025N03

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol

 0.2. Size:926K  rohm
rsr025n03fra.pdf

RSR025N03
RSR025N03

RSR025N03FRARSR025N03TransistorsAEC-Q101 Qualified4V Drive Nch MOS FET RSR025N03FRARSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET2.90.850.4 0.7( )3 Features 1) Low on-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same d

 6.1. Size:1170K  rohm
rsr025n05.pdf

RSR025N03
RSR025N03

Data Sheet4V Drive Nch MOSFET RSR025N05Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT3Features(3)1) Low on-resistance.2) Fast switching speed.(1) (2)3) Drive circuits can be simple.4) Parallel use is easy.ApplicationSwitchingPackaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering unit (pieces) 300

 6.2. Size:979K  rohm
rsr025n05fra.pdf

RSR025N03
RSR025N03

RSR025N05FRA Nch 45V 2.5A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS TSMT3 45V(3) RDS(on) (Max.)100mW(1) ID2.5APD1.0W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 BODY DIODE *2 ESD PROTECTI

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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