RSR025N05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSR025N05

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 2.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.07 Ohm

Encapsulados: TSMT3

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RSR025N05 datasheet

 ..1. Size:1170K  rohm
 rsr025n05.pdf pdf_icon

RSR025N05

Data Sheet 4V Drive Nch MOSFET RSR025N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT3 Features (3) 1) Low on-resistance. 2) Fast switching speed. (1) (2) 3) Drive circuits can be simple. 4) Parallel use is easy. Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TL Basic ordering unit (pieces) 300

 0.1. Size:979K  rohm
 rsr025n05fra.pdf pdf_icon

RSR025N05

RSR025N05FRA Nch 45V 2.5A Power MOSFET Datasheet AEC-Q101 Qualified lOutline VDSS TSMT3 45V (3) RDS(on) (Max.) 100mW (1) ID 2.5A PD 1.0W (2) lFeatures lInner circuit (1) Gate 1) Low on - resistance. (2) Source 2) Built-in G-S Protection Diode. (3) Drain 3) Small Surface Mount Package (TSMT3). 4) Pb-free lead plating ; RoHS compliant *1 BODY DIODE *2 ESD PROTECTI

 6.1. Size:65K  rohm
 rsr025n03.pdf pdf_icon

RSR025N05

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. ( ) ( ) 1 2 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol

 6.2. Size:63K  rohm
 rsr025n03tl.pdf pdf_icon

RSR025N05

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit mm) Structure Silicon N-channel TSMT3 1.0MAX MOS FET 2.9 0.85 0.4 0.7 (3) Features 1) Low on-resistance. ( ) ( ) 1 2 0.95 0.95 2) Built-in G-S Protection Diode. 0.16 1.9 3) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol

MOSTRAR MÁS

Otros transistores... RSM002P03, RSQ015N06, RSQ015P10, RSQ020N03, RSQ045N03, RSR010N10, RSR020N06, RSR025N03, AON7506, RSR030N06, RSU002N06, RSU002P03, RT1A045AP, RT1A050ZP, RT1A060AP, RT1C060UN, RT1E040RP