All MOSFET. RSR025N05 Datasheet

 

RSR025N05 Datasheet and Replacement


   Type Designator: RSR025N05
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 45 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TSMT3
 

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RSR025N05 Datasheet (PDF)

 ..1. Size:1170K  rohm
rsr025n05.pdf pdf_icon

RSR025N05

Data Sheet4V Drive Nch MOSFET RSR025N05Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT3Features(3)1) Low on-resistance.2) Fast switching speed.(1) (2)3) Drive circuits can be simple.4) Parallel use is easy.ApplicationSwitchingPackaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering unit (pieces) 300

 0.1. Size:979K  rohm
rsr025n05fra.pdf pdf_icon

RSR025N05

RSR025N05FRA Nch 45V 2.5A Power MOSFET DatasheetAEC-Q101 QualifiedlOutlineVDSS TSMT3 45V(3) RDS(on) (Max.)100mW(1) ID2.5APD1.0W(2) lFeatures lInner circuit(1) Gate 1) Low on - resistance.(2) Source 2) Built-in G-S Protection Diode.(3) Drain 3) Small Surface Mount Package (TSMT3).4) Pb-free lead plating ; RoHS compliant*1 BODY DIODE *2 ESD PROTECTI

 6.1. Size:65K  rohm
rsr025n03.pdf pdf_icon

RSR025N05

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol

 6.2. Size:63K  rohm
rsr025n03tl.pdf pdf_icon

RSR025N05

RSR025N03 Transistors 4V Drive Nch MOS FET RSR025N03 External dimensions (Unit : mm) Structure Silicon N-channel TSMT31.0MAXMOS FET 2.90.850.4 0.7(3) Features 1) Low on-resistance. ( ) ( )1 20.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3) . (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol

Datasheet: RSM002P03 , RSQ015N06 , RSQ015P10 , RSQ020N03 , RSQ045N03 , RSR010N10 , RSR020N06 , RSR025N03 , IRFP250 , RSR030N06 , RSU002N06 , RSU002P03 , RT1A045AP , RT1A050ZP , RT1A060AP , RT1C060UN , RT1E040RP .

History: IPB80N06S2L-11 | SI8410DB | AP30T10GK

Keywords - RSR025N05 MOSFET datasheet

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