RSU002N06 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RSU002N06

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 0.25 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5 nS

Cossⓘ - Capacitancia de salida: 4.5 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.7 Ohm

Encapsulados: UMT3 SC70 SOT323

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RSU002N06 datasheet

 ..1. Size:214K  rohm
 rsu002n06.pdf pdf_icon

RSU002N06

2.5V Drive Nch MOSFET RSU002N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3 (SC-70) Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(2.5V drive). Application Switching Abbreviated symbol RK Packaging specifications Inner circuit (3) Package Taping Type Code T106 Basic or

 8.1. Size:62K  rohm
 rsu002p03.pdf pdf_icon

RSU002N06

RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance 2) 4V drive (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol WP (3) Drain Packaging specifications Inner circuit P

 8.2. Size:60K  rohm
 rsu002p03t106.pdf pdf_icon

RSU002N06

RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance 2) 4V drive (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol WP (3) Drain Packaging specifications Inner circuit P

Otros transistores... RSQ015P10, RSQ020N03, RSQ045N03, RSR010N10, RSR020N06, RSR025N03, RSR025N05, RSR030N06, IRFP450, RSU002P03, RT1A045AP, RT1A050ZP, RT1A060AP, RT1C060UN, RT1E040RP, RT1E050RP, RT1E060XN