All MOSFET. RSU002N06 Datasheet

 

RSU002N06 Datasheet and Replacement


   Type Designator: RSU002N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 4.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.7 Ohm
   Package: UMT3 SC70 SOT323
 

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RSU002N06 Datasheet (PDF)

 ..1. Size:214K  rohm
 rsu002n06.pdf pdf_icon

RSU002N06

2.5V Drive Nch MOSFET RSU002N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET UMT3(SC-70)Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(2.5V drive). Application Switching Abbreviated symbol : RKPackaging specifications Inner circuit(3)Package TapingTypeCode T106Basic or

 8.1. Size:62K  rohm
 rsu002p03.pdf pdf_icon

RSU002N06

RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance 2) 4V drive (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : WP(3) Drain Packaging specifications Inner circuit P

 8.2. Size:60K  rohm
 rsu002p03t106.pdf pdf_icon

RSU002N06

RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance 2) 4V drive (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : WP(3) Drain Packaging specifications Inner circuit P

Datasheet: RSQ015P10 , RSQ020N03 , RSQ045N03 , RSR010N10 , RSR020N06 , RSR025N03 , RSR025N05 , RSR030N06 , IRF1407 , RSU002P03 , RT1A045AP , RT1A050ZP , RT1A060AP , RT1C060UN , RT1E040RP , RT1E050RP , RT1E060XN .

Keywords - RSU002N06 MOSFET datasheet

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