RSU002P03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RSU002P03
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.2 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 5 nS
Cossⓘ - Capacitancia de salida: 4 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
Encapsulados: UMT3
Búsqueda de reemplazo de RSU002P03 MOSFET
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RSU002P03 datasheet
rsu002p03.pdf
RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance 2) 4V drive (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol WP (3) Drain Packaging specifications Inner circuit P
rsu002p03t106.pdf
RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit mm) Silicon P-channel MOSFET UMT3 2.0 0.9 0.3 0.2 0.7 Features (3) 1) Low On-resistance 2) 4V drive (2) (1) 0.65 0.65 0.15 1.3 (1) Source Each lead has same dimensions Applications (2) Gate Switching Abbreviated symbol WP (3) Drain Packaging specifications Inner circuit P
rsu002n06.pdf
2.5V Drive Nch MOSFET RSU002N06 Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3 (SC-70) Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(2.5V drive). Application Switching Abbreviated symbol RK Packaging specifications Inner circuit (3) Package Taping Type Code T106 Basic or
Otros transistores... RSQ020N03, RSQ045N03, RSR010N10, RSR020N06, RSR025N03, RSR025N05, RSR030N06, RSU002N06, TK10A60D, RT1A045AP, RT1A050ZP, RT1A060AP, RT1C060UN, RT1E040RP, RT1E050RP, RT1E060XN, RTF015N03
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