RSU002P03 Datasheet and Replacement
Type Designator: RSU002P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 4 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.9 Ohm
Package: UMT3
RSU002P03 substitution
RSU002P03 Datasheet (PDF)
rsu002p03.pdf

RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance 2) 4V drive (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : WP(3) Drain Packaging specifications Inner circuit P
rsu002p03t106.pdf

RSU002P03 Transistors 4V Drive Pch MOSFET RSU002P03 Structure Dimensions (Unit : mm) Silicon P-channel MOSFET UMT32.0 0.90.3 0.2 0.7 Features (3)1) Low On-resistance 2) 4V drive (2) (1)0.65 0.650.151.3(1) SourceEach lead has same dimensions Applications(2) GateSwitching Abbreviated symbol : WP(3) Drain Packaging specifications Inner circuit P
rsu002n06.pdf

2.5V Drive Nch MOSFET RSU002N06 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET UMT3(SC-70)Features 1) High speed switing. 2) Small package(UMT3). 3) Low voltage drive(2.5V drive). Application Switching Abbreviated symbol : RKPackaging specifications Inner circuit(3)Package TapingTypeCode T106Basic or
Datasheet: RSQ020N03 , RSQ045N03 , RSR010N10 , RSR020N06 , RSR025N03 , RSR025N05 , RSR030N06 , RSU002N06 , IRFZ24N , RT1A045AP , RT1A050ZP , RT1A060AP , RT1C060UN , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 .
History: MSF14N60 | IPB120N08S4-03 | C3M0065100K | CS65N20-30 | IXFV110N10P | DMG8880LSS | SQM90142E
Keywords - RSU002P03 MOSFET datasheet
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History: MSF14N60 | IPB120N08S4-03 | C3M0065100K | CS65N20-30 | IXFV110N10P | DMG8880LSS | SQM90142E



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