RTL035N03 Todos los transistores

 

RTL035N03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTL035N03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 25 nS

Cossⓘ - Capacitancia de salida: 90 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.04 Ohm

Encapsulados: TUMT6

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RTL035N03 datasheet

 ..1. Size:63K  rohm
 rtl035n03.pdf pdf_icon

RTL035N03

RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol PM Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code T

 0.1. Size:919K  rohm
 rtl035n03fra.pdf pdf_icon

RTL035N03

RTL035N03FRA RTL035N03 Transistors AEC-Q101 Qualified 2.5V Drive Nch MOSFET RTL035N03FRA RTL035N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol PM Applications Switching Packaging specifications Inner circuit

 0.2. Size:61K  rohm
 rtl035n03tr.pdf pdf_icon

RTL035N03

RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol PM Applications Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code T

 9.1. Size:77K  rohm
 rtl030p02tr.pdf pdf_icon

RTL035N03

RTL030P02 Transistors DC-DC Converter (-20V, -3.0A) RTL030P02 External dimensions (Unit mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT6 2.0 0.1 0.85MAX 2) High power package. 0.3+0.1 0.77 0.05 -0.05 3) High speed switching. (6) (5) (4) 4) Low voltage drive. (2.5V) 0 0.1 (1) (2) (3) (1) Drain Applications 0.65 0.65 0.17 0.05 (2) Drain 1pin mark

MOSTRAR MÁS

Otros transistores... RT1A060AP , RT1C060UN , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 , RTF025N03 , AO3407 , RTQ020N03 , RTQ020N05 , RTQ035N03 , RTQ045N03 , RTR020N05 , RTR025N03 , RTR025N05 , RTR030N05 .

History: AOY516 | IXTT240N15X4HV | IXTP34N65X2 | 4N60L-TF1-T | HCA70R180 | 4N65L-TM3-T | IPP60R099P7

 

 

 

 

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