RTL035N03 Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: RTL035N03
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 90 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.04 Ohm
Тип корпуса: TUMT6
Аналог (замена) для RTL035N03
RTL035N03 Datasheet (PDF)
rtl035n03.pdf

RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : PM ApplicationsSwitching Packaging specifications Inner circuit (6) (5) (4)Package TapingType Code T
rtl035n03fra.pdf

RTL035N03FRARTL035N03TransistorsAEC-Q101 Qualified2.5V Drive Nch MOSFETRTL035N03FRARTL035N03 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : PM ApplicationsSwitching Packaging specifications Inner circuit
rtl035n03tr.pdf

RTL035N03 Transistors 2.5V Drive Nch MOSFET RTL035N03 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TUMT6 Features 1) Low On-resistance. 2) Space saving, small surface mount package (TUMT6). 3) Low voltage drive (2.5V drive). Abbreviated symbol : PM ApplicationsSwitching Packaging specifications Inner circuit (6) (5) (4)Package TapingType Code T
rtl030p02tr.pdf

RTL030P02 Transistors DC-DC Converter (-20V, -3.0A) RTL030P02 External dimensions (Unit : mm) Features 1) Low on-resistance. (80m at 2.5V) TUMT62.00.1 0.85MAX2) High power package. 0.3+0.1 0.770.05-0.053) High speed switching. (6) (5) (4)4) Low voltage drive. (2.5V) 0~0.1(1) (2) (3)(1) Drain Applications 0.65 0.650.170.05(2) Drain1pin mark
Другие MOSFET... RT1A060AP , RT1C060UN , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 , RTF025N03 , 7N60 , RTQ020N03 , RTQ020N05 , RTQ035N03 , RTQ045N03 , RTR020N05 , RTR025N03 , RTR025N05 , RTR030N05 .
History: NDT90N04 | 9N50 | IPB180N04S4L-01 | SIR838DP
History: NDT90N04 | 9N50 | IPB180N04S4L-01 | SIR838DP



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