RTQ020N03 Todos los transistores

 

RTQ020N03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTQ020N03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 35 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.089 Ohm

Encapsulados: TSMT6

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RTQ020N03 datasheet

 ..1. Size:55K  rohm
 rtq020n03.pdf pdf_icon

RTQ020N03

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 3) Low voltage drive (2.5V drive). 1pin mark 0.16 0.4 Each lead has same dimensions

 0.1. Size:53K  rohm
 rtq020n03tr.pdf pdf_icon

RTQ020N03

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 3) Low voltage drive (2.5V drive). 1pin mark 0.16 0.4 Each lead has same dimensions

 0.2. Size:913K  rohm
 rtq020n03fra.pdf pdf_icon

RTQ020N03

RTQ020N03 RTQ020N03FRA Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTQ020N03FRA RTQ020N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 3) Low voltage drive (2.5V drive). 1pin mark

 6.1. Size:217K  rohm
 rtq020n05.pdf pdf_icon

RTQ020N03

2.5V Drive Nch MOSFET RTQ020N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 1) Low On-resistance. (6) (5) (4) 2) Space saving small surface mount package (TSMT6). 0 0.1 3) Low voltage drive (2.5V drive). (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Applications Abbreviated symbo

MOSTRAR MÁS

Otros transistores... RT1C060UN , RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 , RTF025N03 , RTL035N03 , 18N50 , RTQ020N05 , RTQ035N03 , RTQ045N03 , RTR020N05 , RTR025N03 , RTR025N05 , RTR030N05 , RTR040N03 .

History: SWF10N65D | HCFL60R350 | SWD026R03VT | AOWF2606 | BRI5N65 | 4N65G-TF3-T | AP01L60H-HF

 

 

 

 

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