RTQ020N05 Todos los transistores

 

RTQ020N05 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTQ020N05

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 45 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 40 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.14 Ohm

Encapsulados: TSMT6

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RTQ020N05 datasheet

 ..1. Size:217K  rohm
rtq020n05.pdf pdf_icon

RTQ020N05

2.5V Drive Nch MOSFET RTQ020N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 1) Low On-resistance. (6) (5) (4) 2) Space saving small surface mount package (TSMT6). 0 0.1 3) Low voltage drive (2.5V drive). (1) (2) (3) 1pin mark 0.16 0.4 Each lead has same dimensions Applications Abbreviated symbo

 0.1. Size:1526K  rohm
rtq020n05hzg.pdf pdf_icon

RTQ020N05

RTQ020N05HZG Datasheet Nch 45V 2A Small Signal MOSFET lOutline l SOT-457T VDSS 45V SC-95 RDS(on)(Max.) 190m TSMT6 ID 2A PD 1.25W lInner circuit l lFeatures l 1) Low on - resistance 2) Built-in G-S protection diode 3) Small surface mount package(TSMT6) 4) Pb-free lead plating ; RoHS compliant 5) AEC-Q101 Qualified l

 0.2. Size:537K  rohm
rtq020n05tr.pdf pdf_icon

RTQ020N05

RTQ020N05 Nch 45V 2A Power MOSFET Datasheet lOutline (6) VDSS 45V (5) TSMT6 (4) RDS(on) (Max.) 190mW (1) ID 2A (2) PD 1.25W (3) lFeatures lInner circuit 1) Low on - resistance. (1) Drain (2) Drain 2) Built-in G-S Protection Diode. (3) Gate (4) Source 3) Small Surface Mount Package (TSMT6). (5) Drain (6) Drain 4) Pb-free lead plating ; RoHS compliant *1 E

 6.1. Size:55K  rohm
rtq020n03.pdf pdf_icon

RTQ020N05

RTQ020N03 Transistors 2.5V Drive Nch MOS FET RTQ020N03 Structure External dimensions (Unit mm) Silicon N-channel MOS FET TSMT6 1.0MAX 2.9 0.85 1.9 Features 0.95 0.95 0.7 (6) (5) (4) 1) Low On-resistance. 2) Space saving, small surface mount package (TSMT6). 0 0.1 (1) (2) (3) 3) Low voltage drive (2.5V drive). 1pin mark 0.16 0.4 Each lead has same dimensions

Otros transistores... RT1E040RP , RT1E050RP , RT1E060XN , RTF015N03 , RTF016N05 , RTF025N03 , RTL035N03 , RTQ020N03 , 20N50 , RTQ035N03 , RTQ045N03 , RTR020N05 , RTR025N03 , RTR025N05 , RTR030N05 , RTR040N03 , RU1C002UN .

History: SWD6N80DE | SWD2N60DC | WMQ140NV6LG4

 

 

 


History: SWD6N80DE | SWD2N60DC | WMQ140NV6LG4

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