RTR025N03 Todos los transistores

 

RTR025N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RTR025N03

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 12 V

Corriente continua de drenaje (Id): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 15 nS

Conductancia de drenaje-sustrato (Cd): 60 pF

Resistencia drenaje-fuente RDS(on): 0.066 Ohm

Empaquetado / Estuche: TSMT3

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RTR025N03 Datasheet (PDF)

1.1. rtr025n03tl.pdf Size:53K _update_mosfet

RTR025N03
RTR025N03

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) Features 3 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( ) 1 2 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbrevi

1.2. rtr025n03fra.pdf Size:913K _update_mosfet

RTR025N03
RTR025N03

RTR025N03FRA RTR025N03 Transistors AEC-Q101 Qualified 2.5V Drive Nch MOS FET RTR025N03FRA RTR025N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 (3) Features 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). (1) (2) 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead ha

 1.3. rtr025n03.pdf Size:55K _rohm

RTR025N03
RTR025N03

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT3 1.0MAX 2.9 0.85 0.4 0.7 ( ) Features 3 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( ) 1 2 0.95 0.95 3) Low voltage drive (2.5V drive). 0.16 1.9 (1) Gate Each lead has same dimensions (2) Source Abbreviate

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