RTR025N03 Todos los transistores

 

RTR025N03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RTR025N03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 2.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.066 Ohm
   Paquete / Cubierta: TSMT3
 

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RTR025N03 Datasheet (PDF)

 ..1. Size:55K  rohm
 rtr025n03.pdf pdf_icon

RTR025N03

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7( ) Features 31) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( )1 20.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbrevi

 0.1. Size:913K  rohm
 rtr025n03fra.pdf pdf_icon

RTR025N03

RTR025N03FRARTR025N03TransistorsAEC-Q101 Qualified2.5V Drive Nch MOS FET RTR025N03FRARTR025N03 Structure External dimensions (Unit : mm)Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7(3) Features 1) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). (1) (2)0.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead ha

 0.2. Size:53K  rohm
 rtr025n03tl.pdf pdf_icon

RTR025N03

RTR025N03 Transistors 2.5V Drive Nch MOS FET RTR025N03 Structure External dimensions (Unit : mm) Silicon N-channel MOS FET TSMT31.0MAX2.90.850.4 0.7( ) Features 31) Low On-resistance. 2) Space saving-small surface mount package (TSMT3). ( ) ( )1 20.95 0.953) Low voltage drive (2.5V drive). 0.161.9(1) Gate Each lead has same dimensions(2) SourceAbbrevi

 0.3. Size:895K  cn vbsemi
 rtr025n03tl.pdf pdf_icon

RTR025N03

RTR025N03TLwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

MOSTRAR MÁS

Otros transistores... RTF016N05 , RTF025N03 , RTL035N03 , RTQ020N03 , RTQ020N05 , RTQ035N03 , RTQ045N03 , RTR020N05 , AON6380 , RTR025N05 , RTR030N05 , RTR040N03 , RU1C002UN , RU1C002ZP , RU1E002SP , RU1L002SN , RUC002N05 .

History: KI2304DS | HSU80N03

 

 
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