RTR030N05 Todos los transistores

 

RTR030N05 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: RTR030N05
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 45 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 19 nS
   Cossⓘ - Capacitancia de salida: 110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.048 Ohm
   Paquete / Cubierta: TSMT3
 

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RTR030N05 Datasheet (PDF)

 ..1. Size:216K  rohm
 rtr030n05.pdf pdf_icon

RTR030N05

2.5V Drive Nch MOSFET RTR030N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance. ( ) ( )1 22) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : PV (3) Drain Application I

 0.1. Size:1024K  rohm
 rtr030n05fra.pdf pdf_icon

RTR030N05

AEC-Q101 Qualified2.5V Drive Nch MOSFET RTR030N05 RTR030N05FRA Structure Dimensions (Unit : mm)Silicon N-channel MOSFETTSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance. ( ) ( )1 22) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol :

 0.2. Size:215K  rohm
 rtr030n05tl.pdf pdf_icon

RTR030N05

2.5V Drive Nch MOSFET RTR030N05 Structure Dimensions (Unit : mm) Silicon N-channel MOSFET TSMT31.0MAX2.90.850.4 0.7( )3 Features 1) Low On-resistance. ( ) ( )1 22) Built-in G-S Protection Diode. 0.95 0.950.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : PV (3) Drain Application I

 8.1. Size:1018K  rohm
 rtr030p02fha.pdf pdf_icon

RTR030N05

RTR030P02FHARTR030P2TransistorsAEC-Q101 Qualified2.5V Drive Pch MOS FET RTR030P02RTR030P02FHA External dimensions (Unit : mm) StructureSilicon P-channel TSMT31.0MAXMOS FET2.90.850.4 0.7(3) Features 1) Low On-resistance. (1) (2)0.95 0.952) Built-in G-S Protection Diode. 0.161.93) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimen

MOSTRAR MÁS

Otros transistores... RTL035N03 , RTQ020N03 , RTQ020N05 , RTQ035N03 , RTQ045N03 , RTR020N05 , RTR025N03 , RTR025N05 , K2611 , RTR040N03 , RU1C002UN , RU1C002ZP , RU1E002SP , RU1L002SN , RUC002N05 , RUE002N02 , RUE002N05 .

History: STU4N52K3 | PMCXB900UE | STU70N2LH5 | APM2309AC | AOI482 | CHM5506JGP | RSS090P03FU6TB

 

 
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