RU1C002UN Todos los transistores

 

RU1C002UN MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RU1C002UN

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.15 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 0.2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 10 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm

Encapsulados: UMT3F

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RU1C002UN datasheet

 ..1. Size:957K  rohm
 ru1c002un.pdf pdf_icon

RU1C002UN

Data Sheet 1.2V Drive Nch MOSFET RU1C002UN Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3F 2.0 0.9 0.32 (3) Features 1) Low on-resistance. 2) Low voltage drive(1.2V drive). (1) (2) 0.65 0.65 0.13 1.3 Abbreviated symbol QR Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TCL Basic ordering u

 7.1. Size:968K  rohm
 ru1c002zp.pdf pdf_icon

RU1C002UN

Data Sheet 1.2V Drive Pch MOSFET RU1C002ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET UMT3F 2.0 0.9 0.32 (3) Features 1) Low on-resistance. 2) Low voltage drive(1.2V drive). (1) (2) 0.65 0.65 0.13 1.3 Abbreviated symbol YK Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TCL Basic ordering un

 8.1. Size:1322K  rohm
 ru1c001zp.pdf pdf_icon

RU1C002UN

RU1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET lOutline l SOT-323FL VDSS -20V SC-85 RDS(on)(Max.) 3.8 UMT3F ID 100mA PD 200mW lInner circuit l lFeatures l 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. lPack

 8.2. Size:2193K  rohm
 ru1c001un.pdf pdf_icon

RU1C002UN

RU1C001UN Datasheet Nch 20V 100mA Small Signal MOSFET lOutline l SOT-323FL VDSS 20V SC-85 RDS(on)(Max.) 3.5 UMT3F ID 100mA PD 150mW lInner circuit l lFeatures l 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. lPackagi

MOSTRAR MÁS

Otros transistores... RTQ020N05 , RTQ035N03 , RTQ045N03 , RTR020N05 , RTR025N03 , RTR025N05 , RTR030N05 , RTR040N03 , 75N75 , RU1C002ZP , RU1E002SP , RU1L002SN , RUC002N05 , RUE002N02 , RUE002N05 , RUF015N02 , RUF020N02 .

History: SFG10R10DF | EMB09N03V | SWD7N65D | 4N60L-TF1-T | HCA70R180 | AP03N70J-HF | IPP60R099P7

 

 

 

 

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