Data Sheet1.2V Drive Nch MOSFET RU1C002UN Structure Dimensions (Unit : mm)Silicon N-channel MOSFET UMT3F2.00.90.32(3)Features1) Low on-resistance.2) Low voltage drive(1.2V drive).(1) (2)0.65 0.65 0.131.3Abbreviated symbol : QR ApplicationSwitching Packaging specifications Inner circuit(3)Package TapingTypeCode TCLBasic ordering u

Data Sheet1.2V Drive Pch MOSFET RU1C002ZP Structure Dimensions (Unit : mm)Silicon P-channel MOSFET UMT3F2.00.90.32(3)Features1) Low on-resistance.2) Low voltage drive(1.2V drive).(1) (2)0.65 0.65 0.131.3Abbreviated symbol : YK ApplicationSwitching Packaging specifications Inner circuitPackage Taping (3)TypeCode TCLBasic ordering un

RU1C001ZPDatasheetPch -20V -100mA Small Signal MOSFETlOutlinel SOT-323FLVDSS-20V SC-85RDS(on)(Max.)3.8 UMT3FID100mAPD200mW lInner circuitllFeaturesl1) Low voltage drive(1.2V) makes this deviceideal for partable equipment.2) Drive circuits can be simple.3) Built-in G-S Protection Diode.lPack

RU1C001UNDatasheetNch 20V 100mA Small Signal MOSFETlOutlinel SOT-323FLVDSS20V SC-85RDS(on)(Max.)3.5 UMT3FID100mAPD150mW lInner circuitllFeaturesl1) Low voltage drive(1.2V) makes this deviceideal for partable equipment.2) Drive circuits can be simple.3) Built-in G-S Protection Diode.lPackagi

RU1C001ZP Pch -20V -100mA Small Signal MOSFET DatasheetlOutlineVDSS-20VUMT3F(3) RDS(on) (Max.)3.8WID-100mA(1) PD150mW (2) lFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIOD

RU1C001UN Nch 20V 100mA Small Signal MOSFET Data SheetlOutlineVDSS20VUMT3F(3) RDS(on) (Max.)3.5WID100mA(1) PD150mW(2) lFeatures lInner circuit1) Low voltage drive(1.2V) makes this(1) Gate device ideal for partable equipment.(2) Source 2) Drive circuits can be simple.(3) Drain 3) Built-in G-S Protection Diode.*1 BODY DIODE *2 ESD PROTECTION DIODE