RU1C002UN - аналоги, параметры транзистора - Справочник транзисторов

RU1C002UN даташит

..1. Size:957K rohm
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Data Sheet 1.2V Drive Nch MOSFET RU1C002UN Structure Dimensions (Unit mm) Silicon N-channel MOSFET UMT3F 2.0 0.9 0.32 (3) Features 1) Low on-resistance. 2) Low voltage drive(1.2V drive). (1) (2) 0.65 0.65 0.13 1.3 Abbreviated symbol QR Application Switching Packaging specifications Inner circuit (3) Package Taping Type Code TCL Basic ordering u

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Data Sheet 1.2V Drive Pch MOSFET RU1C002ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET UMT3F 2.0 0.9 0.32 (3) Features 1) Low on-resistance. 2) Low voltage drive(1.2V drive). (1) (2) 0.65 0.65 0.13 1.3 Abbreviated symbol YK Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TCL Basic ordering un

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RU1C001ZP Datasheet Pch -20V -100mA Small Signal MOSFET lOutline l SOT-323FL VDSS -20V SC-85 RDS(on)(Max.) 3.8 UMT3F ID 100mA PD 200mW lInner circuit l lFeatures l 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. lPack

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RU1C001UN Datasheet Nch 20V 100mA Small Signal MOSFET lOutline l SOT-323FL VDSS 20V SC-85 RDS(on)(Max.) 3.5 UMT3F ID 100mA PD 150mW lInner circuit l lFeatures l 1) Low voltage drive(1.2V) makes this device ideal for partable equipment. 2) Drive circuits can be simple. 3) Built-in G-S Protection Diode. lPackagi