RUE002N02 Todos los transistores

 ..1. Size:216K  rohm
 rue002n02.pdf

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit mm) Silicon N-channel EMT3 MOSFET Applications Switching (1)Source Features (2)Gate (3)Drain Abbreviated symbol QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

 0.1. Size:215K  ruichips
 rue002n02tl.pdf

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit mm) Silicon N-channel EMT3 MOSFET Applications Switching (1)Source Features (2)Gate (3)Drain Abbreviated symbol QR 1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

 6.1. Size:176K  rohm
 rue002n05.pdf

1.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit mm) Silicon N-channel MOSFET EMT3 (SC-75A) Features 1) High speed switing. 2) Small package(EMT3). 3)Ultra low voltage drive(1.2V drive). Abbreviated symbol RH Application Switching Packaging specifications Inner circuit Package Taping (3) Type Code TL Basic ordering unit (pieces)

 9.1. Size:934K  rohm
 rue003n02.pdf

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit mm) Silicon N-channel EMT3 MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source 4) Drive circuits can be simple. (2)Gate (3)Drain Abbreviated symbol QT 5) Parallel use is easy. Applications Switch

 9.2. Size:921K  ruichips
 rue003n02tl.pdf

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit mm) Silicon N-channel EMT3 MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source 4) Drive circuits can be simple. (2)Gate (3)Drain Abbreviated symbol QT 5) Parallel use is easy. Applications Switch