All MOSFET. RUE002N02 Datasheet

 

RUE002N02 Datasheet and Replacement


   Type Designator: RUE002N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 0.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 10 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: EMT3
 

 RUE002N02 substitution

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RUE002N02 Datasheet (PDF)

 ..1. Size:216K  rohm
 rue002n02.pdf pdf_icon

RUE002N02

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Applications Switching (1)Source Features (2)Gate(3)Drain Abbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

 0.1. Size:215K  ruichips
 rue002n02tl.pdf pdf_icon

RUE002N02

1.2V Drive Nch MOSFET RUE002N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Applications Switching (1)Source Features (2)Gate(3)Drain Abbreviated symbol : QR1) Fast switching speed. 2) Low voltage drive (1.2V) makes this device ideal for portable equipment. 3) Drive circuits can be simple. Inner circuit (3) Packaging specifications Packa

 6.1. Size:176K  rohm
 rue002n05.pdf pdf_icon

RUE002N02

1.2V Drive Nch MOSFET RUE002N05 Structure Dimensions (Unit : mm)Silicon N-channel MOSFET EMT3(SC-75A)Features1) High speed switing.2) Small package(EMT3).3)Ultra low voltage drive(1.2V drive).Abbreviated symbol : RH ApplicationSwitching Packaging specifications Inner circuitPackage Taping(3)TypeCode TLBasic ordering unit (pieces)

 9.1. Size:934K  rohm
 rue003n02.pdf pdf_icon

RUE002N02

1.8V Drive Nch MOSFET RUE003N02 Structure Dimensions (Unit : mm) Silicon N-channel EMT3MOSFET Features 1) Low on-resistance. 2) Fast switching speed. 3) Low voltage drive (1.8V) makes this device ideal for portable equipment. (1)Source4) Drive circuits can be simple. (2)Gate(3)Drain Abbreviated symbol : QT5) Parallel use is easy. Applications Switch

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Datasheet: RTR025N05 , RTR030N05 , RTR040N03 , RU1C002UN , RU1C002ZP , RU1E002SP , RU1L002SN , RUC002N05 , MMIS60R580P , RUE002N05 , RUF015N02 , RUF020N02 , RUF025N02 , RUL035N02 , RUM002N02 , RUM002N05 , RUQ050N02 .

History: NVMTS0D6N04C

Keywords - RUE002N02 MOSFET datasheet

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