RUR040N02 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: RUR040N02
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 150 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
Encapsulados: TSMT3
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RUR040N02 datasheet
rur040n02.pdf
RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 Structure Dimensions (Unit mm) Silicon N-channel TSMT3 MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol XF (3) Drain Application Switching Equivalent circuit
rur040n02fra.pdf
RUR040N02FRA RUR040N02 Transistors AEC-Q101 Qualified 1.5V Drive Nch MOSFET RUR040N02 RUR040N02FRA Structure Dimensions (Unit mm) Silicon N-channel TSMT3 MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol XF (3) Drain App
rur040n02tl.pdf
RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 Structure Dimensions (Unit mm) Silicon N-channel TSMT3 MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions (2) Source Abbreviated symbol XF (3) Drain Application Switching Equivalent circuit
rur040n02tl.pdf
RUR040N02TL www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC Co
Otros transistores... RUF015N02 , RUF020N02 , RUF025N02 , RUL035N02 , RUM002N02 , RUM002N05 , RUQ050N02 , RUR020N02 , RU7088R , RUU002N05 , RVQ040N05 , RW1A013ZP , RW1A020ZP , RW1A025AP , RW1A030AP , RW1C015UN , RW1C020UN .
History: DMP2004VK | SSI65R360S2 | AP3P010H
History: DMP2004VK | SSI65R360S2 | AP3P010H
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