RUR040N02 - Даташиты. Аналоги. Основные параметры
Наименование производителя: RUR040N02
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 10 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 4 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 30 ns
Cossⓘ - Выходная емкость: 150 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.035 Ohm
Тип корпуса: TSMT3
Аналог (замена) для RUR040N02
RUR040N02 Datasheet (PDF)
rur040n02.pdf
RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 Structure Dimensions (Unit : mm) Silicon N-channel TSMT3MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : XF(3) Drain Application Switching Equivalent circuit
rur040n02fra.pdf
RUR040N02FRARUR040N02TransistorsAEC-Q101 Qualified1.5V Drive Nch MOSFETRUR040N02RUR040N02FRA Structure Dimensions (Unit : mm)Silicon N-channel TSMT3MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : XF(3) Drain App
rur040n02tl.pdf
RUR040N02 Transistors 1.5V Drive Nch MOSFET RUR040N02 Structure Dimensions (Unit : mm) Silicon N-channel TSMT3MOSFET Features 1) 1.5V drive 2) Low On-resistance. 3) Built-in G-S Protection Diode. 4) Small Surface Mount Package (TSMT3). (1) Gate Each lead has same dimensions(2) SourceAbbreviated symbol : XF(3) Drain Application Switching Equivalent circuit
rur040n02tl.pdf
RUR040N02TLwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Co
Другие MOSFET... RUF015N02 , RUF020N02 , RUF025N02 , RUL035N02 , RUM002N02 , RUM002N05 , RUQ050N02 , RUR020N02 , RU7088R , RUU002N05 , RVQ040N05 , RW1A013ZP , RW1A020ZP , RW1A025AP , RW1A030AP , RW1C015UN , RW1C020UN .
History: STLT19 | FDP150N10 | SGO4606T
History: STLT19 | FDP150N10 | SGO4606T
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