RW1A020ZP Todos los transistores

 

RW1A020ZP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RW1A020ZP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 0.7 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 12 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 10 V

|Id|ⓘ - Corriente continua de drenaje: 2 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 17 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm

Encapsulados: WEMT6

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RW1A020ZP datasheet

 ..1. Size:224K  rohm
 rw1a020zp.pdf pdf_icon

RW1A020ZP

1.5V Drive Pch MOSFET RW1A020ZP Structure Dimensions (Unit mm) WEMT6 Silicon P-channel MOSFET (6) (5) (4) Features 1) Low on-resistance. (1) (2) (3) 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol ZE Applications Inner circuit Switching (6) (5) (4) 2 Packaging specifications Package Taping 1 Type Code T2R (1) Drain Basic or

 8.1. Size:1126K  rohm
 rw1a025ap.pdf pdf_icon

RW1A020ZP

Data Sheet 1.5V Drive Pch MOSFET RW1A025AP Structure Dimensions (Unit mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) 3) Low voltage drive.(1.5V) Abbreviated symbol SD Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code T2CR 2 Ba

 9.1. Size:1127K  rohm
 rw1a030ap.pdf pdf_icon

RW1A020ZP

Data Sheet 1.5V Drive Pch MOSFET RW1A030AP Structure Dimensions (Unit mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) 3) Low voltage drive.(1.5V) Abbreviated symbol SB Application Switching Packaging specifications Inner circuit (6) (5) (4) Package Taping Type Code T2CR 2 Bas

 9.2. Size:203K  rohm
 rw1a013zp.pdf pdf_icon

RW1A020ZP

1.5V Drive Pch MOSFET RW1A013ZP Structure Dimensions (Unit mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) 3) Low voltage drive. (1.5V) Abbreviated symbol XC Application Inner circuit Switching (6) (5) (4) 2 Packaging specifications 1 Package Taping Type Code T2R (1) Drain Basic orderi

MOSTRAR MÁS

Otros transistores... RUM002N02 , RUM002N05 , RUQ050N02 , RUR020N02 , RUR040N02 , RUU002N05 , RVQ040N05 , RW1A013ZP , 60N06 , RW1A025AP , RW1A030AP , RW1C015UN , RW1C020UN , RW1C025ZP , RW1E014SN , RW1E015RP , RW1E025RP .

History: SSF50R140S | SFF054 | SWB090R08ET | 2SK3111-ZJ | APT5014BLLG | AP95T07AGP | OSG65R380FEF

 

 

 

 

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