RW1A025AP Todos los transistores

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RW1A025AP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: RW1A025AP

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.7 W

Tensión drenaje-fuente (Vds): 12 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 2.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 40 nS

Conductancia de drenaje-sustrato (Cd): 130 pF

Resistencia drenaje-fuente RDS(on): 0.044 Ohm

Empaquetado / Estuche: WEMT6

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RW1A025AP Datasheet (PDF)

1.1. rw1a025ap.pdf Size:1126K _rohm

RW1A025AP
RW1A025AP

Data Sheet 1.5V Drive Pch MOSFET RW1A025AP ? Structure ? Dimensions (Unit : mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) ?Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) 3) Low voltage drive.(1.5V) Abbreviated symbol : SD ? Application Switching ? Packaging specifications ? Inner circuit (6) (5) (4) Package Taping Type Code T2CR ?2 Basic ordering unit

4.1. rw1a020zp.pdf Size:224K _rohm

RW1A025AP
RW1A025AP

1.5V Drive Pch MOSFET RW1A020ZP Structure Dimensions (Unit : mm) WEMT6 Silicon P-channel MOSFET (6) (5) (4) Features 1) Low on-resistance. (1) (2) (3) 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : ZE Applications Inner circuit Switching (6) (5) (4) ?2 Packaging specifications Package Taping ?1 Type Code T2R (1) Drain Basic ordering

5.1. rw1a030ap.pdf Size:1127K _rohm

RW1A025AP
RW1A025AP

Data Sheet 1.5V Drive Pch MOSFET RW1A030AP ? Structure ? Dimensions (Unit : mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) ?Features 1) Low On-resistance. 2) Small high power package. (1) (2) (3) 3) Low voltage drive.(1.5V) Abbreviated symbol : SB ? Application Switching ? Packaging specifications ? Inner circuit (6) (5) (4) Package Taping Type Code T2CR ?2 Basic ordering unit

5.2. rw1a013zp.pdf Size:203K _rohm

RW1A025AP
RW1A025AP

1.5V Drive Pch MOSFET RW1A013ZP Structure Dimensions (Unit : mm) Silicon P-channel MOSFET WEMT6 (6) (5) (4) Features 1) Low on-resistance. 2) High power package. (1) (2) (3) 3) Low voltage drive. (1.5V) Abbreviated symbol : XC Application Inner circuit Switching (6) (5) (4) ?2 Packaging specifications ?1 Package Taping Type Code T2R (1) Drain Basic ordering unit

Otros transistores... RUM002N05 , RUQ050N02 , RUR020N02 , RUR040N02 , RUU002N05 , RVQ040N05 , RW1A013ZP , RW1A020ZP , 2SK1058 , RW1A030AP , RW1C015UN , RW1C020UN , RW1C025ZP , RW1E014SN , RW1E015RP , RW1E025RP , RXH070N03 .

 


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Introduzca al menos 1 números o letras