2N6658 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6658
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 25 W
Voltaje máximo drenador - fuente |Vds|: 90 V
Voltaje máximo fuente - puerta |Vgs|: 15 V
Corriente continua de drenaje |Id|: 2 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tiempo de subida (tr): 5 nS
Conductancia de drenaje-sustrato (Cd): 50 pF
Resistencia entre drenaje y fuente RDS(on): 4 Ohm
Paquete / Cubierta: TO3
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2N6658 Datasheet (PDF)
2n6659-2.pdf
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2N6659, 2N6659-2www.vishay.comVishay SiliconixN-Channel 35 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Military QualifiedVDS (V) 35 Low On-Resistence: 1.3 RDS(on) () at VGS = 10 V 1.8 Low Threshold: 1.7 VConfiguration Single Low Input Capacitance: 35 pF Fast Switching Speed: 8 ns Low Input and Output LeakageTO-205ADBENEFITS(TO-39) Guarant
2n6659x.pdf
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N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X Switching Regulators Converters Motor Drives ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage 20V ID TC = 25C Drain Current 1.4A ID TC = 100C Drain Current 1.0A IDM1 Pulsed Drain Current 3A PD TC = 25C Power Dissipation 6.25W
2n6653.pdf
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2N6653Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 300V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6654.pdf
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2N6654Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 350V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6659.pdf
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2N6659MECHANICAL DATADimensions in mm (inches)NCHANNEL8.89 (0.35)ENHANCEMENT MODE9.40 (0.37)7.75 (0.305)8.51 (0.335)MOS TRANSISTOR4.19 (0.165)4.95 (0.195)0.89max.FEATURES(0.035)12.70(0.500)7.75 (0.305)min.8.51 (0.335) Switching Regulatorsdia. Converters5.08 (0.200)typ. Motor Drivers2.542(0.100)1 30.66 (0.026)1.14 (0.045
2n6655.pdf
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2N6655Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 400V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 20A 12.70 (0.50) All Semelab hermetically sealed products can be processed in
2n6653.pdf
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JMnic Product Specification Silicon NPN Power Transistors 2N6653 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol
2n6654.pdf
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JMnic Product Specification Silicon NPN Power Transistors 2N6654 DESCRIPTION With TO-3 package High voltage capability Fast switching speeds Low saturation voltage APPLICATIONS Switcing regulators Inverters Solenoid and relay drivers Deflection circuits PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol
2n6653.pdf
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isc Silicon NPN Power Transistor 2N6653DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta
2n6654.pdf
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isc Silicon NPN Power Transistor 2N6654DESCRIPTIONHigh Voltage CapabilityHigh Current Current CapabilityLow Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesinged for use in switching and linear applications inmilitary and power conversion.Absolute maximum ratings(Ta
Otros transistores... 2N4393CSM , 2N4416 , 2N5045 , 2N5484 , 2N5485 , 2N5486 , 2N6656 , 2N6657 , IRFP260N , 2N6659 , 2N6659-LCC4 , 2N6659-SM , 2N6660 , 2N6660JAN , 2N6660JANTX , 2N6660JANTXV , 2N6660-LCC4 .
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Liste
Recientemente añadidas las descripciónes de los transistores:
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