2N6658 Datasheet. Specs and Replacement
Type Designator: 2N6658 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 90 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 15 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 50 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 4 Ohm
Package: TO3
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2N6658 substitution
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2N6658 datasheet
2n6659-2.pdf
2N6659, 2N6659-2 www.vishay.com Vishay Siliconix N-Channel 35 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Military Qualified VDS (V) 35 Low On-Resistence 1.3 RDS(on) ( ) at VGS = 10 V 1.8 Low Threshold 1.7 V Configuration Single Low Input Capacitance 35 pF Fast Switching Speed 8 ns Low Input and Output Leakage TO-205AD BENEFITS (TO-39) Guarant... See More ⇒
2n6659x.pdf
N-CHANNEL ENHANCEMENT MODE MOSFET 2N6659X Switching Regulators Converters Motor Drives ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise stated) VDS Drain Source Voltage 35V VGS Gate Source Voltage 20V ID TC = 25 C Drain Current 1.4A ID TC = 100 C Drain Current 1.0A IDM1 Pulsed Drain Current 3A PD TC = 25 C Power Dissipation 6.25W... See More ⇒
Detailed specifications: 2N4393CSM, 2N4416, 2N5045, 2N5484, 2N5485, 2N5486, 2N6656, 2N6657, IRF640N, 2N6659, 2N6659-LCC4, 2N6659-SM, 2N6660, 2N6660JAN, 2N6660JANTX, 2N6660JANTXV, 2N6660-LCC4
Keywords - 2N6658 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
MOSFET Parameters. How They Affect Each Other
History: 2N2609
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