SI2302 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311SI2302Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel 20V,3.0A, RDS(ON)=55m @VGS=4.5VRDS(ON)=82m @VGS=2.5VEnhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliableField Effect Transistor Lead free product is acqu

SI230220V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSMillimeter MillimeterREF. REF. SOT-23Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30C 1.4

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302N-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.065 @ VGS = 4.5 V 3.020200.090 @ V 2.0GS = 2.5 V(SOT-23-3L)(SOT-23)G 13 DS 2Top ViewSI2302 (A2sHB)*ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Sou

SI2302 Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 package. / Applications

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302 (KI2302)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A 1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

SI2302MOSFET ROHSN-Channel Enhancement-Mode MOSFETSOT-23-FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)Parameter Symbol LimitUnitDrain-Source Voltage VDS 20V Gate-Source Voltage VGS 10Continuous

Plastic-Encapsulate MosfetsFEATURESSI2302High dense cell design for extremely low RDS(ON)N-Channel MOSFETRugged and reliableCase Material: Molded Plastic.Absolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Ratings UnitDrain-Source Voltage VDS 20 VGate-source Voltage VGS 8 V1.Gate2.SourceDrain Current (Continuous) ID 2.1 A SOT-233.DrainaDrai

SI2302SOT-23 Plastic-Encapsulate MOSFETS20V N-Channel Enhancement Mode MOSFETSOT-23 ID MaxV(BR)DSS RDS(on)Typ 328m @ 4.5V 3.0A 20V 1. GATE 32m @ 3.3V 2. SOURCE 13. DRAIN2FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceEquivalent circuitMARKING D A2sHBG S PACKAGE SPECIFICATIONSReel DIA. Q'TY/Ree

SOT-23 Plastic-Encapsulate MOSFETSSI2302SI2302 N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.045@ 4.5V320V 3A1.GATE0.055@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageA2sHB wAPPLICATIONLoad Switch for Portable DevicesDC/DC Converter*

SI2302 20V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 4A 45mRDS(ON), Vgs@ 2.5V, Ids@ 3.5A 59m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DSOT-23GSMillimeterMillimeterREF. REF.Min.Max. Min. Max.A 2.80 3.00 G 1.80 2.00B 2.30 2.50 H 0.90 1.1C 1.20 1.4

SI2302N-Channel 20-V(D-S) MOSFETV(BR)DSS RDS(on)MAX IDSOT-230.050@ 4.5V320V 3A1.GATE0.065@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquiredMARKING Equivalent CircuitSurface mount packageA2ShbAPPLICATIONLoad Switch for Portable DevicesDC/DC ConverterMaximum ratings (Ta=25 unless otherwise not

SI2305SI2301SI2302SI2302SI2302SI2302SI2302 SI2301 Equivalent CircuitMARKING3400RA2SHB34001.GATE2.SOURCE3.DRAIN

SI2302DSN-channel enhancement mode field-effect transistorRev. 02 20 November 2001 Product dataM3D0881. DescriptionN-channel enhancement mode field-effect transistor in a plastic package usingTrenchMOS1 technology.Product availability:SI2302DS in SOT23.2. Features TrenchMOS technology Very fast switching Logic level compatible Subminiature surface mount packa

Si2302CDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) Qg (Typ.) Material categorization:0.057 at VGS = 4.5 V 2.9 For definitions of compliance please see 20 3.50.075 at VGS = 2.5 V www.vishay.com/doc?999122.6APPLICATIONS Load Switching for Portable Devices DC/DC ConverterTO

Si2302DDSVishay SiliconixN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () Max. ID (A) Qg (Typ.)Definition0.057 at VGS = 4.5 V 2.9 TrenchFET Power MOSFET20 3.50.075 at VGS = 2.5 V 100 % Rg Tested2.6 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switching for Portable Dev

Si2302DSVishay SiliconixN-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.085 @ VGS = 4.5 V 2.820200.115 @ VGS = 2.5 V 2.4TO-236(SOT-23)G 13 DS 2Top ViewSi2302DS (A2)**Marking CodeABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Source Voltage VGS "8TA= 25_

Si2302ADSVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 4.5 V 2.4 Compliant to RoHS Directive 2002/95/EC200.115 at VGS = 2.5 V 2.0TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking CodeOrdering Information: Si2302ADS-T1-E3 (

Si2302CDSVishay SiliconixN-Channel 20-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A) Qg (Typ.) TrenchFET Power MOSFET0.057 at VGS = 4.5 V 2.920 3.5RoHS0.075 at VGS = 2.5 V APPLICATIONS2.6COMPLIANT Load Switching for Portable Devices DC/DC ConverterTO-236(SOT-23)G 13 DS 2Top ViewSi2302

MCCMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311SI2302Phone: (818) 701-4933Fax: (818) 701-4939FeaturesN-Channel 20V,3.0A, RDS(ON)=55m @VGS=4.5VRDS(ON)=82m @VGS=2.5VEnhancement Mode High dense cell design for extremely low RDS(ON) Rugged and reliableField Effect Transistor Lead free product is acqu

Si2302ADSVishay SiliconixN-Channel 2.5-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.060 at VGS = 4.5 V 2.4 100 % Rg Tested20 Compliant to RoHS Directive 2002/95/EC0.115 at VGS = 2.5 V 2.0TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking CodeOrdering Informatio

SI2302AFeatures Rugged and Reliable Lead Free Product is Acquired High Dense Cell Design for Extremely Low RDS(ON) N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free Available Upon Request by Adding Suffix "-HF" Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Field Effect Transistor

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302AN-Channel 1.25-W, 2.5-V MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)0.040 @ VGS = 4.5 V 3.020200.060 @ V 2.0GS = 2.5 V(SOT-23)G 13 DS 2Top View(A2)*SI2302AABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS 20VVGate-Source Voltage VG

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302DS (KI2302DS)SOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A 1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Un

SMD Type MOSFETN-Channel Enhancement MOSFETSI2302DS (KI2302DS)SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.1 Features3 VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A1 2+0.1+0.050.95 -0.1 0.1-0.01+0.11.9 -0.1G 11.Gate3 D2.SourceS 23.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

RUMW UMW SI2302AUMW SI2302AUMW SI2302AN-Channel Enhancement MOSFET FeaturesSOT23 VDS=20V RDS(on)= 85m@VGS=4.5V ,ID=3.6A RDS(on)= 115m@VGS=2.5V ,ID=3.1A Marking1. GATE 2. SOURCE G 1 3. DRAIN 3 DS 2 Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 20V Gate-Source Voltage VGS 8 Ta=25 2.

RUMW UMW SI2302BUMW SI2302BUMW SI2302BSOT-23 Plastic-Encapsulate MOSFETSN-Channel 20-V(D-S) MOSFET UMW SI2302B SOT23 IDV(BR)DSS RDS(on)MAX 80m@4.5V20V2.5A100m@2.5V1. GATE 2. SOURCE 3. DRAIN FEA TURE APPLICATION Load Switch for Portable Devices TrenchFET Power MOSFET DC/DC Converter MARKING Equivalent Circuit A2SHBMaximum rating

SI2302SMOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23 -Features Low RDS(on) @VGS=4.5V 3.3V Logic Level Control N Channel SOT23 Package Pb-Free, RoHS Compliant Applications V R Typ I Max (BR)DSS DS(ON) D Load Switch for DC/DC Converter 48m @ 4.5V Switching Circuits 20V 3 A 55m @ 3.3V LED Driver Order Information Mar

SI2302SSOT-23 Plastic-Encapsulate MOSFETS20V N-Channel Enhancement Mode MOSFETSOT-23 VDS= 20V 3RDS(ON), Vgs@ 4.5V, Ids@ 2.3A4 8m RDS(ON), Vgs@ 3.3V, Ids@ 2.3A 5 5m 1. GATE 2. SOURCE 13. DRAIN2FeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceEquivalent circuitMARKING D A2sHBG S PACKAGE SPE

www.msksemi.comSI2302AI-MSSemiconductor CompianceGeneral Features V = 20V,I = 3 ADS DR

SOT-23 Plastic-Encapsulate MOSFETSSI2302AN-Channel 20-V(D-S) MOSFETSI2302AV(BR)DSS RDS(on)MAX IDSOT-230.040@ 4.5V320V 3A1.GATE0.050@ 2.5V2.SOURCE3.DRAIN12General FEATURETrenchFET Power MOSFETLead free product is acquired Equivalent CircuitMARKINGSurface mount packageA2 wAPPLICATIONLoad Switch for Portable DevicesDC/DC Converter*

SI2302DS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/D

SI2302ADS-T1www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC C

SI2302CDS-T1-GE3www.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/