SI2302 MOSFET. Datasheet pdf. Equivalent

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SI2302 Datasheet (PDF)

1.1. si2302ds.pdf Size:257K _philips2

SI2302DS N-channel enhancement mode field-effect transistor Rev. 02 � 20 November 2001 Product data M3D088 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS�1 technology. Product availability: SI2302DS in SOT23. 2. Features TrenchMOS� technology Very fast switching Logic level compatible Subminiature surface mount package. 3. A

1.2. si2302cds.pdf Size:209K _vishay

Si2302CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • TrenchFET® Power MOSFET VDS (V) RDS(on) ()ID (A) Qg (Typ.) • Material categorization: 0.057 at VGS = 4.5 V 2.9 For definitions of compliance please see 20 3.5 0.075 at VGS = 2.5 V www.vishay.com/doc?99912 2.6 APPLICATIONS • Load Switching for Portable Devices • DC/DC Converter TO

 1.3. si2302ds.pdf Size:64K _vishay

Si2302DS Vishay Siliconix N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.085 @ VGS = 4.5 V 2.8 20 20 0.115 @ VGS = 2.5 V 2.4 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302DS (A2)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VGS "8 TA= 25_C 2

1.4. si2302-tp.pdf Size:270K _vishay

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2302 Phone: (818) 701-4933 Fax: (818) 701-4939 Features N-Channel • 20V,3.0A, RDS(ON)=55m @VGS=4.5V RDS(ON)=82m @VGS=2.5V Enhancement Mode • High dense cell design for extremely low RDS(ON) • Rugged and reliable Field Effect Transistor • Lead free product is acqu

 1.5. si2302ads-t1 si2302ads.pdf Size:199K _vishay

Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Definition 0.060 at VGS = 4.5 V 2.4 • 100 % Rg Tested 20 • Compliant to RoHS Directive 2002/95/EC 0.115 at VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking Code Ordering Informatio

1.6. si2302ad.pdf Size:204K _vishay

Si2302ADS Vishay Siliconix N-Channel 2.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY � Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Definition 0.060 at VGS = 4.5 V 2.4 � Compliant to RoHS Directive 2002/95/EC 20 0.115 at VGS = 2.5 V 2.0 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302ADS (2A)* * Marking Code Ordering Information: Si2302ADS-T1-E3 (Lead (Pb

1.7. si2302cd.pdf Size:209K _vishay

Si2302CDS Vishay Siliconix N-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY � Halogen-free Option Available VDS (V) RDS(on) (?)ID (A) Qg (Typ.) � TrenchFET� Power MOSFET 0.057 at VGS = 4.5 V 2.9 20 3.5 RoHS 0.075 at VGS = 2.5 V APPLICATIONS 2.6 COMPLIANT � Load Switching for Portable Devices � DC/DC Converter TO-236 (SOT-23) G 1 3 D S 2 Top View Si2302CDS (N2)* *

1.8. si2302dds.pdf Size:204K _vishay

Si2302DDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) Max. ID (A) Qg (Typ.) Definition 0.057 at VGS = 4.5 V 2.9 • TrenchFET® Power MOSFET 20 3.5 0.075 at VGS = 2.5 V • 100 % Rg Tested 2.6 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching for Portable Dev

1.9. si2302.pdf Size:260K _mcc

MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 SI2302 Phone: (818) 701-4933 Fax: (818) 701-4939 Features N-Channel � 20V,3.0A, RDS(ON)=55m @VGS=4.5V RDS(ON)=82m @VGS=2.5V Enhancement Mode � High dense cell design for extremely low RDS(ON) � Rugged and reliable Field Effect Transistor � Lead free product is acquired � SOT

1.10. si2302.pdf Size:4060K _htsemi

SI2302 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@ 4.5V, Ids@ 3.6A 85m ? RDS(ON), Vgs@ 2.5V, Ids@ 2.0A 115m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S Millimeter Millimeter REF. REF. SOT-23 Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.40 1.60

1.11. si2302ds.pdf Size:1142K _kexin

SMD Type MOSFET N-Channel Enhancement MOSFET SI2302DS (KI2302DS) SOT-23 Unit: mm +0.1 2.9 -0.1 0.4+0.1 -0.1 ■ Features 3 ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Dr

1.12. si2302ds-3.pdf Size:1471K _kexin

SMD Type MOSFET N-Channel Enhancement MOSFET SI2302DS (KI2302DS) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS=20V ● RDS(on)= 85mΩ@VGS=4.5V ,ID=3.6A ● RDS(on)= 115mΩ@VGS=2.5V ,ID=3.1A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 G 1 3 D 1. Gate S 2 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Un

1.13. si2302 a2shb.pdf Size:1928K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302 N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.065 @ VGS = 4.5 V 3.0 20 20 0.090 @ V 2.0 GS = 2.5 V (SOT-23-3L) (SOT-23) G 1 3 D S 2 Top View SI2302 (A2sHB)* ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Sou

1.14. si2302a.pdf Size:2025K _shenzhen-tuofeng-semi

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2302A N-Channel 1.25-W, 2.5-V MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.040 @ VGS = 4.5 V 3.0 20 20 0.060 @ V 2.0 GS = 2.5 V (SOT-23) G 1 3 D S 2 Top View (A2)* SI2302A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltage VDS 20 V V Gate-Source Voltage VG

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