SI2312 Todos los transistores

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SI2312 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI2312

Código: AC2TF

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.75 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 4.9 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 40 nS

Conductancia de drenaje-sustrato (Cd): 300 pF

Resistencia drenaje-fuente RDS(on): 0.031 Ohm

Empaquetado / Estuche: SOT233L

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SI2312 Datasheet (PDF)

1.1. si2312ds.pdf Size:85K _vishay

SI2312
SI2312

Si2312DS Vishay Siliconix N-Channel 20 -V (D-S) MOSFET FEATURES PRODUCT SUMMARY D 1.8-V Rated D RoHS Compliant VDS (V) rDS(on) (W) ID (A) Qg (Typ) Pb-free 0.033 @ VGS = 4.5 V 4.9 Available 0.040 @ VGS = 2.5 V 4.4 20 11.2 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2312DS (C2)* *Marking Code Ordering Information: Si2312DS-T1 Si2312DS-T1E3 (Lead (Pb)-Free)

1.2. si2312.pdf Size:1882K _htsemi

SI2312
SI2312

SI2312 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31m? RDS(ON), Vgs@2.5V, Ids@4.5A < 37m? RDS(ON), Vgs@1.8V, Ids@3.9A < 85m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G S Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF.

1.3. si2312ds-3.pdf Size:1696K _kexin

SI2312
SI2312

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312DS (KI2312DS) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) = 20V ● ID = 4.9 A (VGS =4.5V) ● RDS(ON) < 33mΩ (VGS = 4.5V) 1 2 ● RDS(ON) < 40mΩ (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) < 51mΩ (VGS = 1.8V) G 1 3 D 1. Gate 2. Source S 2 3. Drain

1.4. si2312ds.pdf Size:1660K _kexin

SI2312
SI2312

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312DS (KI2312DS) SOT-23 Unit: mm ■ Features +0.1 2.9-0.1 +0.1 0.4 -0.1 ● VDS (V) = 20V 3 ● ID = 4.9 A (VGS =4.5V) ● RDS(ON) < 33mΩ (VGS = 4.5V) ● RDS(ON) < 40mΩ (VGS = 2.5V) 1 2 ● RDS(ON) < 51mΩ (VGS = 1.8V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ Abs

1.5. si2312.pdf Size:304K _shenzhen-tuofeng-semi

SI2312
SI2312

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2312 PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 20 7.5 0.047 @ VGS = 1.8 V 4.1 (SOT-23) G 1 3 D Ordering Information: Si2312 S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V

Otros transistores... 2P7172A-5 , 2P7233A , 2P7233A-5 , 2P7209A , 2P7234A , 2P7234A-5 , SI2300 , SI2302 , BF245C , XP151A13COMR , AO3400 , PT8205 , PT8205A , PT8822 , PT4410 , PT9926 , SI2301 .

 


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