All MOSFET. SI2312 Datasheet

 

SI2312 MOSFET. Datasheet pdf. Equivalent

Type Designator: SI2312

SMD Transistor Code: AC2TF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.75 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 4.9 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 40 nS

Drain-Source Capacitance (Cd): 300 pF

Maximum Drain-Source On-State Resistance (Rds): 0.031 Ohm

Package: SOT233L

SI2312 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

SI2312 Datasheet (PDF)

1.1. si2312cds.pdf Size:126K _vishay

SI2312
SI2312

New Product Si2312CDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)e Qg (Typ.) Definition 0.0318 at VGS = 4.5 V • TrenchFET® Power MOSFET 6a • 100 % Rg Tested 20 0.0356 at VGS = 2.5 V 6a 8.8 nC • Compliant to RoHS Directive 2002/95/EC 0.0414 at VGS = 1.8 V 5.6 APPLI

1.2. si2312bds.pdf Size:213K _vishay

SI2312
SI2312

Si2312BDS Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Definition 0.031 at VGS = 4.5 V 5.0 • TrenchFET® Power MOSFET 20 0.037 at VGS = 2.5 V 4.6 7.5 • 100 % Rg Tested 0.047 at VGS = 1.8 V 4.1 • Compliant to RoHS Directive 2002/95/EC TO-236 (SOT-23) G 1 3 D S 2

 1.3. si2312ds.pdf Size:85K _vishay

SI2312
SI2312

Si2312DS Vishay Siliconix N-Channel 20 -V (D-S) MOSFET FEATURES PRODUCT SUMMARY D 1.8-V Rated D RoHS Compliant VDS (V) rDS(on) (W) ID (A) Qg (Typ) Pb-free 0.033 @ VGS = 4.5 V 4.9 Available 0.040 @ VGS = 2.5 V 4.4 20 11.2 0.051 @ VGS = 1.8 V 3.9 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2312DS (C2)* *Marking Code Ordering Information: Si2312DS-T1 Si2312DS-T1E3 (Lead (Pb)-Free)

1.4. si2312.pdf Size:1882K _htsemi

SI2312
SI2312

SI2312 20V N-Channel Enhancement Mode MOSFET VDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A < 31m? RDS(ON), Vgs@2.5V, Ids@4.5A < 37m? RDS(ON), Vgs@1.8V, Ids@3.9A < 85m? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G S Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF.

 1.5. si2312ds-3.pdf Size:1696K _kexin

SI2312
SI2312

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312DS (KI2312DS) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) = 20V ● ID = 4.9 A (VGS =4.5V) ● RDS(ON) < 33mΩ (VGS = 4.5V) 1 2 ● RDS(ON) < 40mΩ (VGS = 2.5V) +0.02 +0.1 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) < 51mΩ (VGS = 1.8V) G 1 3 D 1. Gate 2. Source S 2 3. Drain

1.6. si2312ds.pdf Size:1660K _kexin

SI2312
SI2312

SMD Type MOSFET N-Channel Enhancement MOSFET SI2312DS (KI2312DS) SOT-23 Unit: mm ■ Features +0.1 2.9-0.1 +0.1 0.4 -0.1 ● VDS (V) = 20V 3 ● ID = 4.9 A (VGS =4.5V) ● RDS(ON) < 33mΩ (VGS = 4.5V) ● RDS(ON) < 40mΩ (VGS = 2.5V) 1 2 ● RDS(ON) < 51mΩ (VGS = 1.8V) +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 G 1 1.Gate 3 D 2.Source S 2 3.Drain ■ Abs

1.7. si2312.pdf Size:304K _shenzhen-tuofeng-semi

SI2312
SI2312

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2312 PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) Qg (Typ) 0.031 @ VGS = 4.5 V 5.0 0.037 @ VGS = 2.5 V 4.6 20 7.5 0.047 @ VGS = 1.8 V 4.1 (SOT-23) G 1 3 D Ordering Information: Si2312 S 2 Top View ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Unit Drain-Source Voltage VDS 20 V

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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