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SI2305 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SI2305

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 1.25 W

Tensión drenaje-fuente (Vds): 20 V

Tensión compuerta-fuente (Vgs): 8 V

Corriente continua de drenaje (Id): 2.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 0.9 V

Tiempo de elevación (tr): 36 nS

Conductancia de drenaje-sustrato (Cd): 223 pF

Resistencia drenaje-fuente RDS(on): 0.13 Ohm

Empaquetado / Estuche: SOT23

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SI2305 Datasheet (PDF)

1.1. si2305cds.pdf Size:223K _vishay

SI2305
SI2305

Si2305CDS Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω) ID (A)d Qg (Typ.) Definition 0.035 at VGS = - 4.5 V - 5.8 • TrenchFET® Power MOSFET - 8 0.048 at VGS = - 2.5 V - 5.0 12 nC • 100 % Rg Tested 0.065 at VGS = - 1.8 V - 4.3 • Compliant to RoHS Directive 2002/95/EC APPLICATIONS

1.2. si2305cd.pdf Size:220K _vishay

SI2305
SI2305

Si2305CDS Vishay Siliconix P-Channel 8 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?) ID (A)d Qg (Typ.) Definition 0.035 at VGS = - 4.5 V - 5.8 TrenchFET Power MOSFET - 8 0.048 at VGS = - 2.5 V - 5.0 12 nC 100 % Rg Tested 0.065 at VGS = - 1.8 V - 4.3 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-236 Lo

 1.3. si2305ads.pdf Size:204K _vishay

SI2305
SI2305

New Product Si2305ADS Vishay Siliconix P-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY • Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (Ω)ID (A) Qg (Typ.) Definition 0.040 at VGS = - 4.5 V - 4.1 • TrenchFET® Power MOSFET - 8 0.060 at VGS = - 2.5 V - 3.4 7.8 nC • 100 % Rg Tested 0.088 at VGS = - 1.8 V - 2.0 APPLICATIONS • Load Switch • DC/DC Conv

1.4. si2305ad.pdf Size:201K _vishay

SI2305
SI2305

New Product Si2305ADS Vishay Siliconix P-Channel 8-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Qg (Typ.) Definition 0.040 at VGS = - 4.5 V - 4.1 TrenchFET Power MOSFET - 8 0.060 at VGS = - 2.5 V - 3.4 7.8 nC 100 % Rg Tested 0.088 at VGS = - 1.8 V - 2.0 APPLICATIONS Load Switch DC/DC Converter TO-236

 1.5. si2305ds.pdf Size:185K _vishay

SI2305
SI2305

Si2305DS Vishay Siliconix P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) (?)ID (A) Available 0.052 at VGS = - 4.5 V 3.5 TrenchFET Power MOSFETs: 1.8 V Rated 0.071 at VGS = - 2.5 V - 8 3 0.108 at VGS = - 1.8 V 2 TO-236 (SOT-23) G 1 3 D S 2 Top View Si2305DS (A5)* * Marking Code Or

1.6. si2305.pdf Size:3533K _htsemi

SI2305
SI2305

SI2305 20V P-Channel Enhancement Mode MOSFET VDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130m? RDS(ON), Vgs@-2.5V, Ids@-2.0A 190m ? Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D G S SOT-23(PACKAGE) Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30 C 1.4

1.7. si2305ds.pdf Size:999K _kexin

SI2305
SI2305

SMD Type MOSFET SMD Type P-Channel MOSFET SI2305DS (KI2305DS) SOT-23 Unit: mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) = -8V ● RDS(ON)<0.052 Ω (VGS = -4.5V) 1 2 ● RDS(ON)<0.071 Ω (VGS = -2.5V) D +0.1 +0.05 0.95 -0.1 0.1 -0.01 ● RDS(ON)<0.108 Ω (VGS = -1.8V) +0.1 1.9 -0.1 1. Gate 2. Source G 3. Drain S ■ Absolute Maximum Ratings Ta = 25℃

1.8. si2305ds-3.pdf Size:1000K _kexin

SI2305
SI2305

SMD Type MOSFET SMD Type P-Channel MOSFET SI2305DS (KI2305DS) SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 ■ Features 3 ● VDS (V) = -8V ● RDS(ON)<0.052 Ω (VGS = -4.5V) ● RDS(ON)<0.071 Ω (VGS = -2.5V) 1 2 D +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON)<0.108 Ω (VGS = -1.8V) +0.1 1.9-0.2 1. Gate G 2. Source 3. Drain S ■ Absolute Maximum Ratings Ta

1.9. si2305b.pdf Size:1437K _shenzhen-tuofeng-semi

SI2305
SI2305

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2305B P-Channel 1.25-W, 1.8-V (G-S) MOSFET FEATURES PRODUCT SUMMARY Power MOSFETs: 1.8 V Rated VDS (V) rDS(on) (Ω)ID (A) Pb-free Available 0.060 at VGS = - 4.5 V -3.0 - 16 RoHS* COMPLIANT 0.080 at VGS = - 2.5 V -2.0 (SOT-23) G 1 3 D S 2 Top View Si2305B ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Para

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