SI230520V P-Channel Enhancement Mode MOSFETVDS= -20V RDS(ON), Vgs@-4.5V, Ids@-2.8A 130mRDS(ON), Vgs@-2.5V, Ids@-2.0A 190m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions DGSSOT-23(PACKAGE)Millimeter MillimeterREF. REF. Min.Max. Min. Max.A 2.70 3.10 G 1.90 REF. B 2.40 2.80 H 1.00 1.30

SI2305MOSFET ROHSP-Channel MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-Resistance Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.)Parameter Symbol LimitUnitDrain-Source Voltage VDS -20V Gate-Source Voltage 12VGSIDContinuous Drain

Plastic-Encapsulate MosfetsFEATURESSI2305High dense cell design for extremely low RDS(ON)P-Channel MOSFETRugged and reliableCase Material: Molded Plastic.Absolute Maximum Ratings (TA=25oC, unless otherwise noted)Parameter Symbol Ratings UnitDrain-Source Voltage VDS -12 V1.GateGate-source Voltage VGS 8 V2.SourceSOT-23Drain Current (Continuous) ID -4.1 A3.Draina

SI2305 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 -12V P-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 37m@ -4.5V 1. GATE -4.2A -12V 2. SOURCE 40m@ -3.3V 1 3. DRAIN 2 APPLICATION Features Load Switch for Portable Devices Trench FET Power MOSFET DC/DC Converter MARKING Equivalent circuit D S5 G S PACKAGE SPECIFICATIONS Reel DIA. Q'TY/Reel

SI2305SOT-23 (SOT-23 Field Effect Transistors)P-Channel Enhancement-Mode MOS FETsPMOSMAXIMUM RATINGS Characteristic Symbol Rat Unit Drain-Source VoltageBV -20 VDSS-Gate- Source VoltageV +10 VGS-Drain Current (continuous)I -3.9 AD

SI2305AO3401SI2305SOT-23 Plastic-Encapsulate MOSFETS P-Channel 12-V( D-S) MOSFETFEATURE TrenchFET Power MOSFET APPLICATIONS z Load Switch for Portable Devices z DC/DC Converter MARKING Equivalent CircuitA09TA19T23051.GATE1.GATE2.SOURCE2.SOURCE3.DRAIN3.DRAINMaximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value UnitDrain-Source Voltag

New ProductSi2305ADSVishay SiliconixP-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.040 at VGS = - 4.5 V - 4.1 TrenchFET Power MOSFET- 8 0.060 at VGS = - 2.5 V - 3.4 7.8 nC 100 % Rg Tested0.088 at VGS = - 1.8 V - 2.0APPLICATIONS Load Switch DC/DC Conv

Si2305CDSVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.035 at VGS = - 4.5 V - 5.8 TrenchFET Power MOSFET- 8 0.048 at VGS = - 2.5 V - 5.0 12 nC 100 % Rg Tested0.065 at VGS = - 1.8 V - 4.3 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

Si2305CDSVishay SiliconixP-Channel 8 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.035 at VGS = - 4.5 V - 5.8 TrenchFET Power MOSFET- 8 0.048 at VGS = - 2.5 V - 5.0 12 nC 100 % Rg Tested0.065 at VGS = - 1.8 V - 4.3 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

New ProductSi2305ADSVishay SiliconixP-Channel 8-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.040 at VGS = - 4.5 V - 4.1 TrenchFET Power MOSFET- 8 0.060 at VGS = - 2.5 V - 3.4 7.8 nC 100 % Rg Tested0.088 at VGS = - 1.8 V - 2.0APPLICATIONS Load Switch DC/DC Conv

Si2305DSVishay SiliconixP-Channel 1.25-W, 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)Available0.052 at VGS = - 4.5 V 3.5 TrenchFET Power MOSFETs: 1.8 V Rated0.071 at VGS = - 2.5 V - 8 30.108 at VGS = - 1.8 V 2TO-236 (SOT-23) G 1 3 D S 2 Top View Si2305DS (A5)* * Mark

SI2305BFeatures Low RDS(ON) Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 Halogen Free Available Upon Request By Adding Suffix "-HF"P-Channel MOSFET Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)Maximum Ratings Operating Junction Temperature Range: -55C to +150C Storage Tempe

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SI2305BP-Channel 1.25-W, 1.8-V (G-S) MOSFETFEATURESPRODUCT SUMMARY Power MOSFETs: 1.8 V RatedVDS (V) rDS(on) ()ID (A)Pb-freeAvailable0.060 at VGS = - 4.5 V-3.0- 16RoHS*COMPLIANT0.080 at VGS = - 2.5 V -2.0(SOT-23)G 13 DS 2Top ViewSi2305BABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise notedPara

SMD Type MOSFETSMD TypeP-Channel MOSFETSI2305DS (KI2305DS)SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1 Features3 VDS (V) = -8V RDS(ON)0.052 (VGS = -4.5V) RDS(ON)0.071 (VGS = -2.5V)1 2D +0.02+0.10.15 -0.020.95 -0.1 RDS(ON)0.108 (VGS = -1.8V)+0.11.9-0.21. GateG 2. Source3. DrainS Absolute Maximum Ratings Ta

SMD Type MOSFETSMD TypeP-Channel MOSFETSI2305DS (KI2305DS)SOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13 Features VDS (V) = -8V RDS(ON)0.052 (VGS = -4.5V)1 2 RDS(ON)0.071 (VGS = -2.5V)D +0.1+0.050.95 -0.1 0.1 -0.01 RDS(ON)0.108 (VGS = -1.8V) +0.11.9 -0.11. Gate2. SourceG 3. DrainS Absolute Maximum Ratings Ta = 25

R UMW SI2305AUMW SI2305AUMWP-Channel MOSFETSOT23 Features VDS (V) = -20V RDS(ON)0.065 (VGS = -4.5V) RDS(ON)0.100 (VGS = -2.5V) RDS(ON)0.250 (VGS = -1.8V)1. GATE 2. SOURCE 3. DRAIN MARKINGD A50TG S Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitDrain-source voltage VDS -20 VGate-source voltage VG

SI2305CDS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA

SI2305ADS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICA

SI2305DS-T1-GE3www.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICAT