SMG2305PE Todos los transistores

 

SMG2305PE MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SMG2305PE
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 4.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.043 Ohm
   Paquete / Cubierta: SC59
     - Selección de transistores por parámetros

 

SMG2305PE Datasheet (PDF)

 ..1. Size:616K  secos
smg2305pe.pdf pdf_icon

SMG2305PE

SMG2305PE -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ALensure minimal power loss and heat dissipation. Typical 33applicat

 6.1. Size:65K  secos
smg2305p.pdf pdf_icon

SMG2305PE

SMG2305P -4.5A , -20V , RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high Acell density trench process to provide low RDS(on) and to Lensure minimal power loss and heat dissipation. 33Top

 7.1. Size:926K  secos
smg2305.pdf pdf_icon

SMG2305PE

SMG2305-4.2A, -20V,RDS(ON) 65mElektronische Bauelemente P-Channel Enhancement Mode Power Mos.FETRoHS Compliant ProductA suffix of -C specifies halogen & lead-freeDescriptionSC-59ADim Min MaxThe SMG2305 provide the designer with the best Lcombination of fast switching, low on-resistance A 2.70 3.103and cost-effectiveness. B 1.40 1.60SBTop View2 1

 7.2. Size:680K  willas
smg2305l.pdf pdf_icon

SMG2305PE

FM120-M WILLASSMG2305LTHRUP-Channel Enhancement Mode Power Mos.FETFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better rDescriptioneverse leakage current and thermal resistance. SOD-123HSC-59 Low profile surface mounted applic

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRFBF30PBF | BRD2N60 | OM6101ST | 2SK1662 | BLS60R380F-U | IAUC60N04S6L039 | 2SK1005

 

 
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