SMG2306A Todos los transistores

SMG2306A 5 A, 30 V, RDS(ON) 35 m N-Channel Enhancement Mode Power Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The SMG2306A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2306A is universally used for all co

SMG2306N 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal A L power loss and conserves energy, making this device 3 3 ideal for use in

SMG2306NE 3.5A , 30V , RDS(ON) 58 m N-Channel Enhancement Mode Mos.FET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize A L High Cell Density process. Low RDS(on) assures 3 3 minimal power loss and conserves energy, making Top View C B this device i

SMG2305 -4.2A, -20V,RDS(ON) 65m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of -C specifies halogen & lead-free Description SC-59 A Dim Min Max The SMG2305 provide the designer with the best L combination of fast switching, low on-resistance A 2.70 3.10 3 and cost-effectiveness. B 1.40 1.60 S B Top View 2 1

SMG2302 3.2A, 20V,RDS(ON) 85m Elektronische Bauelemente N-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SC-59 A Dim Min Max Description L A 2.70 3.10 3 B 1.40 1.60 S B Top View The SMG2302 provide the designer with the best 2 1 C 1.00 1.30 Combination of fast switching, low on-resistance D 0.35 0.50 and

SMG2305P -4.5A , -20V , RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high A cell density trench process to provide low RDS(on) and to L ensure minimal power loss and heat dissipation. 3 3 Top

SMG2305PE -4.5 A, -20 V, RDS(ON) 43 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to A L ensure minimal power loss and heat dissipation. Typical 3 3 applicat

SMG2301P -2.6 A, -20 V, RDS(ON) 130 m P-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION SC-59 The miniature surface mount MOSFETs utilize a high cell density trench process to provide low RDS(on) and to ensure A L minimal power loss and heat dissipation.Typical applications 3 3

SMG2301 -2.6A, -20V,RDS(ON) 130m Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A suffix of "-C" specifies halogen & RoHS compliant SC-59 A Dim Min Max Description L A 2.70 3.10 3 B 1.40 1.60 The SMG2301 is universally preferred for all commercial S B Top View 2 1 C 1.00 1.30 industrial surface mount application and suited for l

SMG2302N 3.4 A, 20 V, RDS(ON) 76 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free DESCRIPTION SC-59 These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to A L ensure minimal power loss and heat dissipation. Typical 3 3 app

FM120-M WILLAS SMG2305L THRU P-Channel Enhancement Mode Power Mos.FET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better r Descriptioneverse leakage current and thermal resistance. SOD-123H SC-59 Low profile surface mounted applic